STF13NM60N-H

The STF13NM60N-H is a insulated-gate Field-Effect Transistor (FET) made with N-channel MOS technology for high performance applications. It is a low threshold device capable of operating at low gate-source voltage and offers excellent thermal resistance, low gate capacitance, and low on resistance.

The voltage applied between the gate and the source is used to modulate the conductivity of the drain-source path, by inducing an inversion layer of charge carriers in the substrate. This inversion layer, typically composed of electrons for N-channel FETs, is governed by the gate-source voltage and is also known as the Drain-Source field.

The STF13NM60N-H offer a wide array of ESD ratings and very low on-state resistance and is ideal for use in applications with high power, such as power supply units, electric motors and lighting applications. The STF13NM60N-H also feature fast switching and low gate charge resulting in low power consumption, a short switching time and a fast rising edge.

The STF13NM60N-H has an excellent power handling capability with a maximum drain source voltage of 600V and a maximum drain current of 13A. It features a rugged design with a high temperature rating and is ideal for use in applications that require higher dynamic performance or low conduction losses, due to its reduced on-state resistance and fast switching time.

The STF13NM60N-H also provides a low thermal resistance with a maximum junction temperature of 150°C. This ensures efficient operation with low thermal losses, allowing the device to operate at higher temperatures and still maintain its performance.

The STF13NM60N-H series is suitable for a wide range of applications such as automotive electronics, motor drives, medical equipment, and industrial power applications. It is also frequently found in battery powered applications due to its low on-state resistance, which improves efficiency and extends battery life.

The STF13NM60N-H are reliable and robust devices that are capable of handling a wide range of temperatures and voltages. They are suitable for a wide range of applications from low power circuits to high power load switching. This makes them ideal for use in automotive and industrial applications that require high performance and reliable operation.

In conclusion, the STF13NM60N-H are high performance single N-channel MOSFETs that are designed for the most demanding applications. They provide an excellent power handling capability, low thermal resistance, and fast switching capabilities. These features make them ideal for use in a wide range of applications such as automotive and industrial power applications, motor drives, and battery powered applications.