| Allicdata Part #: | 497-13946-5-ND |
| Manufacturer Part#: |
STF110N10F7 |
| Price: | $ 1.99 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 100V TO-220FP |
| More Detail: | N-Channel 100V 45A (Tc) 30W (Tc) Through Hole TO-2... |
| DataSheet: | STF110N10F7 Datasheet/PDF |
| Quantity: | 230 |
| 1 +: | $ 1.80180 |
| 50 +: | $ 1.45076 |
| 100 +: | $ 1.30574 |
| 500 +: | $ 1.01557 |
| 1000 +: | $ 0.84147 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 30W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5117pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
| Series: | DeepGATE™, STripFET™ VII |
| Rds On (Max) @ Id, Vgs: | 7 mOhm @ 22.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 45A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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STF110N10F7 is a high speed MOSFET produced by STMicroelectronics. It is a single N-channel MOSFET with a drain-source voltage rating of 110V. It has a maximum operating temperature range of 175°C and is designed to operate over a wide temperature range.
The main application fields of the STF110N10F7 are switch mode power supplies, motor control and switching applications. This MOSFET is also suitable for driving IGBTs, MOSFETs, and high current loads. It provides an excellent switching speed, low on-state resistance, and high current handling capability.
The working principle of the STF110N10F7 is based on two-resistor current regulation. It consists of two N-channel MOSFETs which are operated in series and the device is connected to a low-voltage power source. During operation, the gate of the second MOSFET is held at a voltage higher than that of the source. This creates a voltage divider between the two gates and the current through the MOSFETs is regulated. Thus, when the drain current reaches a certain level, the gate-source voltage of the second MOSFET increases, resulting in a higher resistance in the circuit. This increases the overall load current and thus reduces the power dissipated by the MOSFET.
The STF110N10F7 MOSFET has a low gate capacitance which helps it to switch faster, thus increasing efficiency and power loss reduction. It has a gate-source threshold voltage of 4V, which makes it suitable for use in 3.3V/5V systems. Additionally, it has a low RDS(on) of 15mΩ, excellent thermal resistance and an avalanche rating of 55V.
The STF110N10F7 is ideally suited for high frequency, high voltage applications, such as DC-to-AC converters, AC-DC converters, ZVS (Zero Voltage Switching) off-line AC-DC converters and high-efficiency Class D audio amplifiers.
In conclusion, the STF110N10F7 is a high performance N-channel MOSFET with a maximum operating temperature of 175°C, low RDS(on) of 15mΩ and a gate-source threshold voltage of 4V. It is suitable for use in switch-mode power supplies, motor control and switching applications, as well as for driving IGBTs, MOSFETs and high current loads. It has excellent switching speed, low on-state resistance, and high current handling capability.
The specific data is subject to PDF, and the above content is for reference
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STF110N10F7 Datasheet/PDF