STF15NM60N

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The STF15NM60N is a N-channel MOSFET (Field Effect Transistor) used primarily in the power management industry. It is available in the TO-220F, TO-220FP and ISOTOP Power packages, and can handle peak power up to 600W in a DO-220F package.

The STF15NM60N is a P-channel enhancement-mode device and is constructed using an N-type channel. In most cases, the drain-source resistance R_DS(ON) of the MOSFET is used for power switching applications. The resistance value in this MOSFET is 4.5mΩ (typical) at 5V and the power dissipation limit is 2W. The maximum drain source voltage of the device is 600V.

The convergence of semiconductor technology and integrated circuit design has resulted in the manufacture of lightweight, high-power devices like the STF15NM60N. The STF15NM60N is well suited for high power applications such as power conversion, switching power supply, DC/DC converters and automotive power applications. Its wide range of features, including a threshold voltage of 2.3V, output capacitance of 84.2pF, and gate-drain leakage current of 0.7nA make the STF15NM60N an ideal choice for high performance applications.

The STF15NM60N working principle is based on the gate-source voltage Vgs. When this voltage reaches the MOSFET threshold voltage Vt, carriers near the channel drain start to be expelled. This action reduces the channel resistance and induces a conduction current in the drain-source channel. The size and the shape of the channel are based on the value of Vgs. The source-drain current Id is almost proportional to the value of Vgs and will increase accordingly when the voltage is increased.

The STF15NM60N is also equipped with other characteristics that allow it to perform better in certain applications. Its fast switching speed due to a drain-source input capacitance of 84.2pF allows it to be used in high frequency switching applications such as in radio frequency (RF) power amplifiers and pulse applications. Its relatively low thermal resistance of 1.17°C/W, compared to other similar devices, makes it suitable for high thermal applications. In addition, the STF15NM60N has a fast reverse recovery time of 100ns, meaning it is well suited for high power applications.

In conclusion, the STF15NM60N is a versatile and reliable N-channel MOSFET that is making its place in the power management industry. It is well-equipped to handle high power applications and its operational characteristics make it suitable for a wide range of applications. It can be used in DC/DC converters, power supplies, automotive power, pulse and radio frequency applications, as well as many other power management applications.

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