Allicdata Part #: | 497-13437-ND |
Manufacturer Part#: |
STF15N80K5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 14A TO-220FP |
More Detail: | N-Channel 800V 14A (Tc) 35W (Tc) Through Hole TO-2... |
DataSheet: | STF15N80K5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | SuperMESH5™ |
Rds On (Max) @ Id, Vgs: | 375 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STF15N80K5 is an excellent example of a modern, high power Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This type of transistor is ideal for applications requiring fast switching, high power density and excellent temperature performance. It allows for very low on-state resistance, as well as very low gate-source capacitance. This allows it to provide a high degree of electrical isolation and virtually eliminates any effect of gate capacitance on circuit performance.
The STF15N80K5 is available in a TFL package, which is a leadless package with an exposed aluminum, gold-plated cathode, and gold-plated source and drain connections. This package has a thickness of 1.2 mm and can withstand temperatures up to 175°C. The source and drain are connected to the exposed aluminum by soldering, which provides excellent electrical contact. The device is designed with an internal drain-source voltage rating of 800 V and a maximum drain current of 15 A. The device also has excellent thermal resistance, with a maximum junction-to-ambient rating of 70°C/W.
However, one of the best features of the STF15N80K5 is its working principle. This MOSFET is a voltage-controlled device and depends on the bias current of its gate-source terminals (GTD and GTS) to alter its resistivity. When the voltage applied to the GTS terminal is greater than -4 V, the current flows from the source to the drain. This is known as the "on" state, and the resistance between the source and drain is reduced. Conversely, when the voltage applied to the GTD terminal is under -4 V, the current is blocked by the MOSFET, known as the "off" state. This enables the device to provide complete isolation of the two terminals, and prevent unwanted current flow.
The STF15N80K5 can be used in a variety of applications requiring a high degree of power and efficiency. The most common applications are high-speed switching circuits, such as switch-mode power supplies and high-frequency switching of digital systems. The device can also be used in motor speed controllers, motor phase controllers and motor drivers. Additionally, the device can be used in audio preamps, amplifiers and audio-frequency converters. The MOSFET is also common in other applications such as telecom switching, industrial temperature controllers and PLCs.
The STF15N80K5 is an excellent choice for any application requiring a high degree of power and efficiency. The device provides excellent electrical characteristics and works in a wide range of temperature conditions. It is easy to use and has a low gate capacitance, making it ideal for switching circuits.
The specific data is subject to PDF, and the above content is for reference
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