STF12NM65

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The STF 12NM65 is a N-channel MOSFET produced by STMicroelectronics. It is a MDmesh II power MOSFET designed to be used in high voltage power supplies and other power electronic applications. The device is a monolithic, low on-resistance, N-channel MOSFET with integrated gate charge circuitry and features a minimum blocking voltage of either 600V.Given its wide range of features, the STF 12NM65 is an excellent choice for a variety of applications, including low-side and high-side switching, battery-powered circuitry, or as a power switch for high-powered machinery.

Having a Pribluda-Type Output stage, the STF 12NM65 is built with a monolithic structure enabling high-quality power switches for applications with higher carrying current. This includes high-voltage white goods, such as air conditioners, refrigerators, washing machines, dishwashers and other power electronic appliances. The device can also be used in the telecom industry, where it can be used as a gate driver switch in base station power stages.

The STF 12NM65 has a low on-resistance of 1.06Ω depending on the drain-to-source voltage (VDS), protects the devices from over-voltage, has a higher safe operating area (SOA) requirement and has a low gate charge (Qg) of 22 nC. This makes the device well suited for high frequency switching applications and enables higher switching frequencies allowing for higher power efficiency.

The STF 12NM65 works on the principle of a MOSFET device, which uses an insulated gate to regulate the flow of current between the drain and the source of the device. The gate is insulated through a thin layer of silicon dioxide, which allows the device to be subjected to high voltage application, while preventing current flow in the other direction. When a voltage is applied across the gate of the MOSFET, it changes its electrical resistivity, providing the opportunity to switch the load current between the source and drain.

The STF 12NM65 is also equipped with a pre-biased gate, which can reduce its thresh-hold voltage and reduce its reverse transfer capacitance. This makes it easier to control the device under certain voltage conditions as compared to other MOSFETs without pre-biased gate. Additionally, the device has a flatness range of 4V, meaning that no matter the gate voltage, the drain current will remain almost constant over this range.

The STF 12NM65 is an excellent choice for a wide range of applications due to its high blocking voltage, low on-resistance, pre-biased gate, flatness range and relatively low power losses. The device can be used in a variety of power supplies, as a switch in power electronic appliances, and as a driver switch in the telecom industry. The device also facilitates higher switching frequencies, providing better-utilized power efficiency.

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