STF11N60DM2

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	614pF @ 100V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	16.5nC @ 10V
Series:	MDmesh™
Rds On (Max) @ Id, Vgs:	420 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	10A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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STF11N60DM2 Application Field and Working PrincipleSTF11N60DM2 is a N-Channel MOSFET that belongs to the STF11N60DM2 series from STMicroelectronics. It is designed for use in applications such as switching mode power supplies, motor control, audio amplifiers and other general applications that require high current/voltage levels and high-speed switching.The STF11N60DM2 is a single N-channel MOSFET with a Gate-Source voltage of ± 20V, a drain current (ID) of 11A and a drain-source voltage (VDS) of 600V. This MOSFET uses a unique process and built-in features that provide increased efficiency, high current density, ruggedness, and very high performance compared to other available MOSFETs.Working PrincipleThe MOSFET, also known as a metal-oxide-semiconductor or MOS transistor, is a type of semiconductor device used in many applications. It works on the principle of electrostatic control; by using an electric field, the MOSFET can transfer a signal in an analog or digital circuit. The MOSFET\'s conduction properties are determined by the presence or absence of a diode between its gate and the source junction. If a voltage applied to the gate is sufficient to create a potential barrier, no current will flow and the MOSFET is in the “OFF” state. If the voltage is lower than the potential barrier, it will create an inversion layer in the substrate at the source junction and current will flow, resulting in the MOSFET being “ON”.The STF11N60DM2 has been designed with two distinct functions. The first is the N-type semiconductor region between the source and drain electrodes, which creates a conducting channel. The second is the gate-to-source voltage which creates an electric field that controls the width of the channel and the amount of current that can flow through the device.The STF11N60DM2 features a unique process that provides increased efficiency and high current density, as well as ruggedness and excellent performance compared to other available MOSFETs.AdvantagesThe STF11N60DM2 is a cost-effective, low on-resistance, single n-channel MOSFET with excellent switching performance and high gate threshold voltage. It is suitable for use in a variety of applications, including high current/voltage switching, audio amplifiers, switching mode power supplies, motor control, and other general applications. Its high-speed nature makes it suitable for pulse width modulation (PWM) applications.The device also features a low on-resistance which minimizes power losses and helps to reduce heat dissipation. Its unique process also provides increased efficiency and improved ruggedness and performance compared to other available MOSFETs.ConclusionThe STF11N60DM2 series from STMicroelectronics is a single N-channel MOSFET designed for use in high-current/voltage applications. It features a Gate-Source voltage of ± 20V, a drain current of 11A, and a drain-source voltage of 600V. Its uniqueness provides benefits such as high current density, increased efficiency, ruggedness, and excellent performance. The STF11N60DM2 is suitable for use in a variety of applications such as switching mode power supplies, motor control, audio amplifiers, and other general applications that require high current/voltage levels and fast switching.

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