STF12N120K5

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STF12N120K5 is a high performance, 100 V N-channel E series MOSFET developed by STMicroelectronics. It utilizes an advanced construction technology, and is designed to reduce the “on” resistance, while maintaining high switching speeds.

The STF12N120K5 consists of a N-channel Logic Level FET (Field Effect Transistor) with a Vgs of -12 V, a low Rds(on) of 0.064 Ω, and a maximum drain source continuous current of 15 A. The maximum peak pulsed source drain current is 35 A. With an avalanche energy of 135 mJ, this device is specified for gate-source breakdown voltages (Rg) up to 1.5 GΩ.

In terms of applications, the STF12N120K5 is suitable for a wide range of low voltage, high performance switching applications. It can be used to provide low-level I/O protection, DC-DC conversion, and power MOSFET switching. This FET can also be used in linear applications such as current sensing and voltage level shifting.

In terms of working principle, the STF12N120K5 is a static semiconductor device. It is composed of a channel of positively charged gates, two source electrodes, and a drain electrode. The channel between the source and drain electrodes is called the depletion region. When a negative voltage is applied to the gate terminal, electrons from the source region are attracted to the gate terminal, creating an electric field between the source and drain. This field reduces the resistance between the source and drain, allowing current to flow from the source to the drain.

The STF12N120K5 is a versatile device suitable for a wide range of switching applications. Its unique construction of low Rds(on) and high voltage rating helps make the device very efficient and reliable. With the right application and design, the STF12N120K5 can be a solid solution for many complex power and switching needs.

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