STF10N65K3 Allicdata Electronics
Allicdata Part #:

497-12562-5-ND

Manufacturer Part#:

STF10N65K3

Price: $ 1.70
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 10A TO-220FP
More Detail: N-Channel 650V 10A (Tc) 35W (Tc) Through Hole TO-2...
DataSheet: STF10N65K3 datasheetSTF10N65K3 Datasheet/PDF
Quantity: 949
1 +: $ 1.70000
10 +: $ 1.64900
100 +: $ 1.61500
1000 +: $ 1.58100
10000 +: $ 1.53000
Stock 949Can Ship Immediately
$ 1.7
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Series: SuperMESH3™
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STF10N65K3 is a specially designed N-channel,650 V, 10 A, 11 mΩ super-junction power MOSFET. As one of the latest member of the super-junction MOSFET family, this device not only provides a high performance of mobility and power rating but also offer excellent switching behavior.

The STF10N65K3 provides superior performance with very low RDS(on). This low RDS(on) further helps in lowering system power consumption.

Applications of STF10N65K3

The STF10N65K3 can be used in a variety of applications such as: power conversion, automotive powertrain, switching power supplies, computing and consumer appliances, industrial and medical, e-bikes, battery management, motor control and etc.

The device can be used to control the current flow through an inductor by controlling the effective resistance between its drain and source. This is very common in low voltage applications up to 48V where the switching speed is not so important. It is also useful in applications such as phase shifting, power factor correction, phase control and rectification.

The STF10N65K3 MOSFET can also be used as an electronic switch to switch on and off high power devices and circuits. This is especially useful in applications such as hybrid cars, switching power supplies and audio systems. This device can also be used for inrush current limiting. It is suitable for high frequency switching where its low On-resistance allows for very low switching losses.

Working principle of STF10N65K3

Unlike conventional MOSFETs, the STF10N65K3 features an embedded Super-Junction structure. The Super-Junction structure allows the MOSFET to attain lower RDS(on) at a given voltage while maintaining higher gain. This feature also enables high-speed switching due to the short channel.

The Super-Junction structure is arranged such that the current flows from the drain directly to the source in one direction. When the gate voltage is high, the MOSFET conducts. When the gate voltage is low, the MOSFET does not conduct and current does not flow. This is the basic operation of the STF10N65K3.

The MOSFET is also capable of conducting higher power for its given size than other transistors due to its lower Ron. This allows for higher power handling capacity in compact packages. It is also capable of operating at higher frequencies due to its low switching losses.

Conclusion

In conclusion, the STF10N65K3 is an excellent MOSFET for applications such as switching power supplies, motor control, and audio systems. It features an embedded Super-Junction structure which provides excellent switching speed, low On-resistance, and high power handling capacity. It is also capable of operating at higher frequencies due to its low switching losses, making it an excellent choice for high-performance power conversion systems.

The specific data is subject to PDF, and the above content is for reference

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