STF15NM65N

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STF15NM65N is a kind of metal-oxide-semiconductor field-effect transistor (MOSFET), single type, which has a drain-source voltage range from 8 to 55 V. It is an enhancement mode transistor, which means that it needs voltage applied to the gate to switch it on. This transistor also has a low gate voltage control, is non-polar and produces a series of low-resistance states when turned on. In addition, it is suitable for applications such as power switching, drive circuits, and a range of communication applications.

The STF15NM65N has an n-channel and can be driven with low gate voltage. It is constructed with a conductive source and gate, an insulated gate, an N-type substrate, and a drain. The drain and source are connected to the gate terminal. This ensures that the field effect created between the gate and the drain is constant when the gate is turned on. Thus, the current flowing through the drain is modulated by adjusting the voltage across the gate and drain electrodes of the transistor. As a result, this transistor can be used to switch devices on or off.

The device is controlled by the gate-source voltage, VGS. When VGS is applied to the drain, electrons are attracted to the gate, which forms the conducting channel between the source and the drain. The current then flows through the MOSFET, depending on the magnitude of VGS. When the transistor is turned off, the voltage is reduced, and the gate becomes strongly attracted to the source, which restricts the current flow and turns off the circuit. By controlling the VGS, it is possible to keep the transistor on or off.

The STF15NM65N has a low on-state resistance (RDS (ON)) and can be used in applications requiring low power consumption. Its high voltage level shifting capability makes it suitable for use in power systems where it can be used to drive large amounts of current. For example, it can be used in power supplies, motor control, transducers, and in industrial machines requiring high switching frequency. It is also suitable for power amplifiers, digital and analog converters, television systems, and other communication systems.

The STF15NM65N also has the advantage of being used for low-side or high-side switch applications, providing good noise immunity with immunity against ESD events. It is also well-suited to low-distortion and low-noise applications. The device is also suitable for high current switching applications due to its low gate charge. Its fast switching speed and low RDS(ON) make it a reliable and efficient switch in many high-performance applications.

In summary, STF15NM65N is an n-channel metal-oxide-semiconductor field-effect transistor well-suited for applications such as power supplies, motor control, transducers, and industrial machines. It has a low on-state resistance and can be used for low-side or high-side switch applications. In addition, it has a high voltage level shifting capability and provides good noise immunity. Its fast switching speed and low gate charge make it a reliable and efficient switch in many high-performance applications.

The specific data is subject to PDF, and the above content is for reference