STF11NM60N

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	850pF @ 50V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	31nC @ 10V
Series:	MDmesh™ II
Rds On (Max) @ Id, Vgs:	450 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	10A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The STF11NM60N is a N-Channel enhancement mode Field Effect Transistor (FET) manufactured by STMicroelectronics. These components are used for a variety of applications, such as switching, power management, and amplifying electrical signals. In this article, we will discuss the applications and working principles of the STF11NM60N.

Applications of STF11NM60N

The STF11NM60N is a reliable and cost-effective choice for a variety of applications. The most common use of the STF11NM60N is as a power switch, most often in electronic circuits. Due to its low on-state resistance, it is capable of switching higher power loads with minimal power loss and heat generation. This makes it ideal for high-efficiency applications such as DC-DC converters and motor controllers.Another common application of the STF11NM60N is in analog circuits, as a variable resistor or amplifier. Its wide range of gate voltages and low on-state resistance makes it well-suited for use as an adjustable resistor or variable amplifier. This allows it to be used to adjust the gain of an amplifier, or the intensity of a light, for example.

Working Principle of STF11NM60N

The STF11NM60N is a type of field effect transistor (FET). FETs are transistors that use an electric field to control the voltage between two terminals. Most FETs have three terminals: a source terminal, a gate terminal, and a drain terminal.The STF11NM60N works by modulating the flow of electrons between the source and drain terminals. When a voltage is applied to the gate terminal, it induces a charge on the semiconductor material, which attracts electrons to the gate and modulates the current flow between the source and drain terminals. The magnitude of the voltage applied to the gate terminal determines the amount of current flowing between the source and drain terminals.

Conclusion

The STF11NM60N is a versatile and cost-effective N-Channel enhancement mode Field Effect Transistor (FET) manufactured by STMicroelectronics. It is commonly used as a power switch or amplifier in electronic circuits. Its working principle depends on modulating the flow of electrons between the source and drain terminals by applying a voltage to the gate terminal. This allows it to be used for a variety of applications, such as switching, power management, and amplifying electrical signals.

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