STF18N60DM2

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	800pF @ 100V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Series:	MDmesh™ DM2
Rds On (Max) @ Id, Vgs:	295 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	13A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STF18N60DM2 is a type of mosfet specifically designed for power applications. This type of mosfet is one of the most powerful and advanced mosfets currently available on the market. The STF18N60DM2 utilizes a three-terminal vertical DMOS structure to provide a very low RDS(ON) and fast switching performance, making it an ideal choice for many power management applications. These power management applications include variable frequency drives, power supplies, DC-DC converters, and many more.The STF18N60DM2 utilizes a high-density vertical DMOS construction to achieve its low RDS(ON), high-speed switching capabilities. This high-density construction allows it to achieve a much lower on-resistance while maintaining the same power handling capacity. This makes the STF18N60DM2 well suited for numerous driving applications like variable frequency drives, power supplies, and DC-DC converters.In addition, the STF18N60DM2 has been designed with an innovative protection system that reduces the risk of a thermal shutdown at higher operation temperatures. This protection system ensures that the device is able to operate even under extreme temperatures without any loss of performance. This is a major benefit for applications that operate in high temperatures or are located in enclosed or poorly ventilated areas.The STF18N60DM2 also features an advanced gate driver circuit, which enables it to achieve higher speeds and lower chances of potential problems during its application. This gate driver circuit is capable of switching at speeds up to 45V per nanosecond.In short, the STF18N60DM2 is an innovative and powerful mosfet specifically designed for power applications. Its high-density vertical DMOS construction allows it to achieve a low RDS(ON), while its advanced gate driver circuit enables it to switch much faster than comparable mosfets. The STF18N60DM2 is also very reliable, featuring an advanced protection system that reduces the risk of thermal shutdown and protects it from further damages. The STF18N60DM2 is an ideal choice for many power management applications, such as variable frequency drives, power supplies, and DC-DC converters.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description