| Allicdata Part #: | 497-15266-5-ND |
| Manufacturer Part#: |
STF10N105K5 |
| Price: | $ 3.31 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 1050V 6A TO220FP |
| More Detail: | N-Channel 1050V 6A (Tc) 30W (Tc) Through Hole TO-2... |
| DataSheet: | STF10N105K5 Datasheet/PDF |
| Quantity: | 837 |
| 1 +: | $ 3.31000 |
| 10 +: | $ 3.21070 |
| 100 +: | $ 3.14450 |
| 1000 +: | $ 3.07830 |
| 10000 +: | $ 2.97900 |
| Vgs(th) (Max) @ Id: | 5V @ 100µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 30W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 545pF @ 100V |
| Vgs (Max): | 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 21.5nC @ 10V |
| Series: | MDmesh™ K5 |
| Rds On (Max) @ Id, Vgs: | 1.3 Ohm @ 3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drain to Source Voltage (Vdss): | 1050V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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STF10N105K5 belongs to a type of transistors, named FETs (Field Effect Transistors), and specifically falls into the category of the MOSFET (Metal Oxide Semiconductor Field Effect Transistors). This particular type of FET is referred to as a single-gate, which is defined by the device having only one main gate controlling its operating characteristics. The STF10N105K5 differs from traditional transistors in the way it operates. Traditional transistors typically rely on the movement of electrons to control its characteristics, however with a MOSFET, the transistor relies on charge carriers, which is either electrons or holes, to interact with a gate, which is made up of metal oxide particles, to control its characteristics.
The STF10N105K5 is widely used in electrical engineering and computer science applications. In electrical engineering applications, it is frequently used as a means of controlling current, voltage and power for a variety of devices. This is most commonly done by using it as a switch to control electrical signals. In computer science applications, this type of transistor is used for logic operations, to control the flow of electricity and for memory storage.
The working principle of the STF10N105K5 is relatively simple. The transistor works by using a gate, which is made up of a metal oxide, to control the flow of electrical current. The gate is connected to a source and a drain, which are two different points in the transistor. When a high voltage is applied to the gate, it allows the current to flow between the source and the drain. On the other hand, when a low voltage is applied to the gate, it stops the current from flowing between the source and the drain.
In conclusion, STF10N105K5 belongs to a type of transistors, known as FETs (Field Effect Transistors) and specifically falls into the category of the MOSFET (Metal Oxide Semiconductor Field Effect Transistors). This particular type of FET is referred to as single-gate, which is defined by it having only one main gate controlling its operating characteristics. It is commonly used in electrical engineering and computer science applications, as a means of controlling current, voltage and power for a variety of devices and for logic operations, to control the flow of electricity and for memory storage. Its working principle is relatively simple, as the gate is controlled by a high voltage or low voltage to control the flow of electrical current between the source and the drain.
The specific data is subject to PDF, and the above content is for reference
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STF10N105K5 Datasheet/PDF