STF15N65M5

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	816pF @ 100V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 10V
Series:	MDmesh™ V
Rds On (Max) @ Id, Vgs:	340 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The STF15N65M5 belongs to a family of single Fifth Generation N-channel Power MOSFETs. It is built using STMicroelectronics’ latest high voltage multi-epitaxial Planar technology available in an M5 package which is ST\'s Enhanced PowerMESH™ technology. It is an extremely efficient and cost-effective way of providing power in high-power applications. The STF15N65M5 is a high voltage, N-channel MOSFET designed to withstand high voltage applications. It is used in a wide range of applications including motor drives, uninterruptible power supplies, solar power inverters, power converters and power amplifiers. It is also used in low-voltage switch applications such as automotive and telecom equipment. The STF15N65M5 is a high voltage MOSFET that can be used in both voltage-mode and current-mode applications. Its low on-state resistance, high voltage breakdown rating, and fast switching rate make it ideal for applications requiring highly efficient and high power conversion.The STF15N65M5 is a N-channel MOSFET with an operating temperature range of -55°C to +200°C. It has an RDS(on) of 1.2 Ω, an ID rating of 15A, and maximum VDS of 650V. Its maximum gate-source and gate-drain dV/dt is 200V/ns and 8V/ns respectively. The STF15N65M5 is designed to operate with a minimum gate-source voltage (VGS) of 10V. It is typically used with external gate drivers, such as a BSC610N02, in order to convert the 10V minimum gate voltage to the required drive voltage. It is also designed to have fast switching speeds, with a dV/dt of 200V/ns. This enables the device to switch much faster than conventional MOSFETs.The STF15N65M5 is a high-performance, 150V MOSFET device. It offers high efficiency and low on-state resistance. Its robust design, high power handling capability, and fast switching rate make it ideal for high-voltage power conversion applications. It is also suitable for automotive, telecom, and consumer electronics applications.The STF15N65M5 is a MOSFET and is used in various applications, such as motor drives and uninterruptible power supplies. The device is designed to drive high currents, with a maximum current rating of 15A and a maximum voltage rating of 650V. Its low on-state resistance and fast switching rate make it ideal for efficient power conversion. In addition, it has an extremely low gate-source threshold voltage of 10V. The working principle of the STF15N65M5 is based on the MOSFET structure. When a voltage is applied to the gate, an inversion layer is induced in the channel between the source and drain. This process reduces the resistance between the two conductors, allowing current to flow between them. This principle allows the device to be used in switching applications, as well as for power control. The STF15N65M5 is a versatile device that can be used in various applications. It is designed for use in motor drives, uninterruptible power supplies, solar power inverters, power converters, and power amplifiers. In addition, it can be used in low-voltage switch applications, such as automotive and telecom equipment. The device is designed to have a low on-state resistance, high voltage breakdown rating, and fast switching rate, making it an ideal choice for efficient and high power conversion applications.

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