
Allicdata Part #: | 497-12257-ND |
Manufacturer Part#: |
STI13005-1 |
Price: | $ 0.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 400V 3A IPAK |
More Detail: | Bipolar (BJT) Transistor NPN 400V 3A 30W Through ... |
DataSheet: | ![]() |
Quantity: | 2988 |
1 +: | $ 0.61110 |
10 +: | $ 0.54621 |
100 +: | $ 0.42601 |
500 +: | $ 0.35192 |
1000 +: | $ 0.27783 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 5V @ 750mA, 3A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 2A, 5V |
Power - Max: | 30W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
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STI13005-1 application field and working principle
The STI13005-1 is a single, general-purpose bipolar junction transistor (BJT). It has a rating of -54 V, a current rating of 120 mA, and an hFE rating of 10. These specifications indicate that the component is suitable for applications in which high power and medium to low voltage operation is desired.
The transistor is composed of two junctions, one of which is formed at the base and the other at the emitter. An emitter region of negative charge carriers is situated between the two junctions, while the two sides of the junction are equally heavily doped with either negative or positive charge carriers. The base-to-emitter junction allows current to flow from the emitter to the collector, and is referred to as a forward biased junction. Inversely, the collector-to-emitter junction prohibits current flow in the opposite direction and is known as the reverse biased junction.
The basic working principle of the STI13005-1 is as follows. When a forward biasing current flows through the base-to-emitter junction, the base region accumulates a large amount of majority carriers. As the base region negatively charges, these majority carriers are progressively forced across the junction into the emitter region. This action effectively creates a potential difference, known as the \'base voltage\'.
When current is supplied to the collector, a second potential difference is created between the collector and the emitter. This collector-base voltage subsequently attracts the charge carriers from the emitter region, allowing them to cross over and collect at the collector side. As a result of this, a representative signal is produced at the collector with an amplified magnitude compared to that of the input signal.
As a result, the STI13005-1 can be used in various applications requiring a general-purpose, medium to low voltage, highly sensitive BJT. Its rating of -54 V, current rating of 120 mA, and hFE rating of 10, combined with its small size, make it ideal for use in mobile, automotive and industrial electronic systems.
The STI13005-1 is a versatile component and, as such, is equally suitable for use in amplifiers, drivers, switching circuits and level detectors. Its lowered resistance and increased current ratings also make it suitable for constructing audio systems that require higher power output.
The specific data is subject to PDF, and the above content is for reference
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