| Allicdata Part #: | 497-12256-ND |
| Manufacturer Part#: |
STI10N62K3 |
| Price: | $ 1.74 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 620V 8.4A I2PAK |
| More Detail: | N-Channel 620V 8.4A (Tc) 125W (Tc) Through Hole I2... |
| DataSheet: |  STI10N62K3 Datasheet/PDF |
| Quantity: | 950 |
| 1 +: | $ 1.74000 |
| 10 +: | $ 1.68780 |
| 100 +: | $ 1.65300 |
| 1000 +: | $ 1.61820 |
| 10000 +: | $ 1.56600 |
Specifications
| Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | I2PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 125W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1250pF @ 50V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
| Series: | SuperMESH3™ |
| Rds On (Max) @ Id, Vgs: | 750 mOhm @ 4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.4A (Tc) |
| Drain to Source Voltage (Vdss): | 620V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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The STI10N62K3 is a single-N-channel Power MOSFET designed for switching and low-level detection. This device is manufactured using the field-effect transistors (FETs)technology. It provides high efficient switching performance and low power consumption during device operation.The STI10N62K3 MOSFET is commonly used for a wide range of applications that require switching and low-level detection. These applications include variable power supply circuits, high-frequency amplifier circuits, charge pump circuits, pulse-width modulation (PWM) circuits, voltage control circuits, low-voltage detection circuits, and AC/DC circuit control circuits. It can also be used in other applications such as hot swap applications and power converters. The STI10N62K3 package consists of a package body, gate and drain contacts. The drain contact is designed to give electrical contact to the drain when the MOSFET is in the off state. The gate contact is designed to provide electrical contact to the gate of the MOSFET when the device is in the on state. Both contacts are insulated from each other for improved reliability. The STI10N62K3 is a depletion mode MOSFET, which means the device will remain in its off state until a voltage is applied to the gate. Once the gate voltage exceeds the threshold voltage, the MOSFET will begin to turn on. The drain current will then increase proportionally to the gate voltage and the drain-source voltage. The drain current will remain constant until the gate voltage reaches the cut-off voltage. Moreover, the STI10N62K3 incorporates a number of features that helps to reduce switching losses and reduce conduction losses. It has a low gate to source capacitance which leads to faster switching speeds, improved heat dissipation and lower power consumption. The device also features a low input and output capacitance, which helps to reduce the power losses due to switching. The low drive voltage and low input/output resistance of the device provide better power management. The STI10N62K3 is a single N-channel MOSFET that offers high efficient switching performance and low power consumption. This device is designed to be used in a wide range of applications that require switching and low-level detection. It provides features such as low gate to source capacitance and low input/output capacitance that help to reduce switching and conduction losses. Additionally, its low drive voltage and low input/output resistance help in power management.
The specific data is subject to PDF, and the above content is for reference
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