STI15NM60ND Allicdata Electronics
Allicdata Part #:

STI15NM60ND-ND

Manufacturer Part#:

STI15NM60ND

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 14A I2PAK
More Detail: N-Channel 600V 14A (Tc) 125W (Tc) Through Hole I2P...
DataSheet: STI15NM60ND datasheetSTI15NM60ND Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: FDmesh™ II
Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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STI15NM60ND Application Field and Working Principle

The STI15NM60ND is a power MOSFET that comes in a TO-247 package. It is manufactured by STMicroelectronics, and is designed to be used in a wide range of applications. This power MOSFET is optimised for use in switchers, converters, and high-voltage and motor control circuits, as well as many other applications.

What is a MOSFET?

A MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) is a type of transistor which uses an electric field to control the current flowing through it. In effect, it acts as a switch, allowing current to flow through it when the voltage applied to its gate is adequate. It is mainly used to control and regulate the flow of electric current and to perform logic operations.

Advantages of using a MOSFET

MOSFETs offer a number of advantages compared to other transistor technologies, such as bipolar transistors (BJT). They require less current for gate control, have lower gate capacitance and switching losses, and are capable of operating at much higher frequency than BJTs. Additionally, MOSFETs are more efficient than BJTs, and can switch faster than any other transistor technology. This makes them highly suitable for power management applications, especially in the high-frequency range.

What is STI15NM60ND?

The STI15NM60ND part is a discrete N-channel MOSFET produced by STMicroelectronics. It is designed to be used in an SOT-223 package, with a maximum current carrying capacity of 15A and a drain-source voltage of 600V. STI15NM60ND is designed to provide superior switching performance, even at higher frequencies, making them an ideal choice for applications where fast switching is required.

STI15NM60ND Application Field

STI15NM60ND is mainly used in switchers, converters, motor control circuits and high-voltage applications. The device can switch between 14A and 15A, with its drain-source voltage range from 0V to 600V. It is also suitable for high-side circuit applications, such as pulse-width modulation (PWM) control, and for applications where large currents need to be switched quickly. Additionally, it is capable of supporting high-frequency operations, up to 600kHz.

STI15NM60ND Working Principle

When voltage is applied to the gate terminal of the STI15NM60ND MOSFET, it allows current to flow through the drain and source terminals. The current passes through the channel, which is formed between the drain and source terminals, and is modulated by the voltage applied to the gate terminal. The transistor acts like a switch, allowing current to flow through it when the voltage at the gate is adequate. When the voltage is removed, the transistor reverts back to its off state.

Conclusion

The STI15NM60ND is an advanced MOSFET optimised for high-voltage, high-current and high-frequency applications. It is mainly used for applications such as converters, motor control circuits and high-voltage applications, where fast switching is required. The device uses an electric field to control the current flowing through it, enabling it to switch between 14A and 15A with a drain-source voltage of up to 600V. This makes it an ideal choice for applications where fast, reliable switching is required.

The specific data is subject to PDF, and the above content is for reference

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