Allicdata Part #: | 497-13839-5-ND |
Manufacturer Part#: |
STI10NM60N |
Price: | $ 1.85 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 10A I2PAK |
More Detail: | N-Channel 600V 10A (Tc) 70W (Tc) Through Hole I2PA... |
DataSheet: | STI10NM60N Datasheet/PDF |
Quantity: | 974 |
1 +: | $ 1.67580 |
10 +: | $ 1.51137 |
100 +: | $ 1.21445 |
500 +: | $ 0.94457 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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:The STI10NM60N is a high voltage N-channel FET, or Field Effect Transistor, which is a type of semiconductor device composed of a source, gate and drain. It is used in a variety of applications, particularly as a switch or voltage-controlled resistor in power electronics. The STI10NM60N has a particular design that helps to increase its power efficiency, making it suitable for use in a range of applications. This article will discuss the applications and working principle of the STI10NM60N.
The STI10NM60N is highly efficient in switching and regulating power and is a particularly reliable device for use in systems that require high-power efficiency. It is ideal for use in applications where high switching frequency and accuracy are essential. These applications typically include power supplies and motor control, as well as various industrial applications.
The STI10NM60N features a unique design that helps to increase its power efficiency. The device consists of a thin layer of insulating material between the source and the drain, allowing for better conductivity between the two. This layer also provides a convenient means for controlling the transistor\'s voltage, reducing the amount of power that is wasted in the switching process and allowing for more efficient control.
The STI10NM60N is a popular choice for use in power management systems, as it has a low on resistance which reduces power dissipation in the switching process. This, in turn, helps to improve efficiency and reduce power losses. This device is also useful for applications where low gate capacitance is desirable, as it has a low gate capacitance that helps to reduce power losses and improve efficiency.
The working principle of the STI10NM60N is relatively simple. When a gate voltage is applied to the device, electrons will flow from the source to the drain, creating an electric current. The gate voltage is then used to control the magnitude of the current, allowing for fine control over the device. The design of the STI10NM60N also makes it suitable for use in circuits with high voltage and large currents, as the electric field created by the gate voltage helps to ensure that the current is evenly distributed throughout the circuit.
The STI10NM60N is a reliable and power efficient device for use in a variety of applications. It is ideal for use in power supplies and motor control as well as other industrial applications. The device is also useful for applications where low gate capacitance is desirable. The STI10NM60N\'s high power efficiency and low gate capacitance make it an attractive option for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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