Allicdata Part #: | 497-11327-5-ND |
Manufacturer Part#: |
STI16N65M5 |
Price: | $ 2.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 12A I2PAK |
More Detail: | N-Channel 650V 12A (Tc) 90W (Tc) Through Hole I2PA... |
DataSheet: | STI16N65M5 Datasheet/PDF |
Quantity: | 940 |
1 +: | $ 2.67750 |
10 +: | $ 2.39085 |
100 +: | $ 1.96050 |
500 +: | $ 1.58752 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1250pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 279 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STI16N65M5 is a type of MOSFET that is a single-packaged power transistor. This power transistor is often used to control current flow in modern electronics. It enables the switching of loads such as motors, lights, and other electrical components from the available voltage. As the number of source voltage increases, the forward voltage drops and one can control a large current with relatively low power supply.
Application Field
The STI16N65M5 is an ideal choice for various applications such as Reverse Polarity (RPP) protection, load switch, and LED backlighting. In the automotive environment, this MOSFET is used to provide an efficient load switch interface in the car audio system. This is effective in the surge protection of the vehicle’s sensitive components. Furthermore, it is suitable for the power management in LCD TVs, tablet PCs and laptops.
Working Principle
The STI16N65M5 MOSFET is a voltage-controlled device. The voltage ratio between the gate and source is monitored to control the switching operation. When the gate voltage is higher than the source voltage, the MOSFET switches “on” easily. When the gate voltage is lower than the source voltage, it will not be able to switch itself on. Further, the MOSFET can be controlled by the number of source voltage supplied to it. When the source voltage is increased, the forward voltage drops, which enables control of a large current with relatively low power supply.
Advantages
The STI16N65M5 has some advantages compared to traditional power transistors. It has low on-resistance, which gives it better efficiency. Additionally, it is also known for having very low input capacitance, reducing the wastage of power. The temperature range of the STI16N65M5 is also much wider than other power transistors, which allows it to operate in a wider range of temperatures. This MOSFET is also capable of withstanding high inrush current, thus making it less prone to thermal shock. Moreover, it offers higher degree of integration, thus reducing the amount of components used in an application.
Conclusion
The STI16N65M5 is an ideal choice for various applications. It offers high degree of integration, low on-resistance, and wide temperature range. Additionally, it is also resistant to inrush current and provides efficient control of current with relatively low power supply. All these benefits of the STI16N65M5 make it a great choice for modern electronics.
The specific data is subject to PDF, and the above content is for reference
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