STI11NM60ND

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	90W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	850pF @ 50V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	FDmesh™ II
Rds On (Max) @ Id, Vgs:	450 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	10A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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STI11NM60ND Application Field and Working Principle

The STI11NM60ND is a field-effect transistor (FET) designed for use as part of a power switch or transistor-based switching circuit. It is an n-doped, depletion-mode, monolithic MOSFET, which typically means it allows current to flow from the source to the drain when no gate voltage is applied. This makes it especially useful in low-voltage circuit designs.

Description

The STI11NM60ND is a single MOSFET with an integrated gate-source voltage (VGS) rating of 20V and drain-source voltage (VDS) rating of 600V. It has an on-state resistance (RDS(on)) of 0.24 ohms and a maximum operating temperature of 175°C. It also features a maximum power dissipation of 172W and a maximum thermal resistance junction to case (RθJC) of 16.5°C/W.

Applications

The STI11NM60ND is typically used in a variety of power switching applications, such as high current or high voltage systems. It is also used in power switching applications requiring low gate drive and fast switching. Examples of applications include motor control, lighting and lighting dimming, home appliances, power supplies, server power backup systems, solar panels and other consumer electronics.

Working Principle

The STI11NM60ND functions based on the principles of metal–oxide–semiconductor (MOS) technology. In the MOS structure, the source is connected to the substrate and the gate is connected to the metal layer that may be connected to ground or a voltage source through a resistor. The metal–oxide–semiconductor field-effect transistor works on the principle of the enhancement mode, where a gate voltage is applied to the gate-source terminal for controlling the conduction between source and drain.When voltage is applied to the gate-source terminal, a field is created around the MOSFET\'s gate which induces a strong electric connection between source and drain, allowing the current to flow from source to drain. When the gate-source voltage is removed, the gate field drops and the current drops to zero. This is why the STI11NM60ND is typically used in low voltage circuit designs; the low voltage applied to the gate can easily turn the drain current on or off, making it suitable for power switching.

Conclusion

The STI11NM60ND is an n-doped, depletion-mode, monolithic MOSFET designed for use as part of a power switch or transistor-based switching circuit. It is useful in a variety of power switching applications, is low in gate drive and can switch fast. It uses the principles of the MOS technology to control conduction between source and drain, by applying a gate voltage to the gate-source terminal for inducing a strong electric connection between source and drain, allowing the current to flow from source to drain.

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