STI19NM65N

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	150W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1900pF @ 50V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	55nC @ 10V
Series:	MDmesh™ II
Rds On (Max) @ Id, Vgs:	270 mOhm @ 7.75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	15.5A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The STI19NM65N is a N-channel Enhanced Product, manufactured by STMicroelectronics. It has a wide range of applications, from power management and computing, to industrial applications and telecommunications. It is also widely used in automotive, education, and medical electronics applications.This part is suitable for power switching and motor control applications, and operates as a high-speed rectifier for high-side switch applications. It is a dual-gate MOSFET, which means it has two gates and it is also a part of the STPION Power MOSFET family. The STI19NM65N has an incredibly impressive variety of different features that make it invaluable in many applications. Its 7.5A continuous drain current means that it can be used for higher power applications. Its high-saturated drain-source voltage of 80v allows for a higher current transfer efficiency and makes it ideal for motor control applications. The device also supports high frequency switching, with a maximum frequency of 4MHz. Furthermore, it has very low gate-threshold voltage, with a gate-source turn-off voltage of 1.3V. As for the working principle of the STI19NM65N MOSFET, it relies on the principle of gate control. In this type of device, the gate is used to control the flow of current from the source to the drain. The gate is essentially a capacitor and when a voltage is applied to it, it reduces the resistance between the source and the drain and allows the current to flow through the device. This voltage is referred to as the Gate Threshold Voltage or Gate-Source Voltage and the value changes depending upon the MOSFET being used.The STI19NM65N MOSFET also features thermal characteristics, which is a critical aspect of any MOSFET. The drain-source thermal resistance, also known as junction-to-case thermal resistance, is a measure of how well heat is transferred away from the device. The lower the value, the better the heat transfer. This is important for high-powered applications, where the device must dissipate heat to prevent damage to the device. The device also has a drain-source breakdown voltage of 500V. This is the minimum value at which the MOSFET can be operational.The STI19NM65N MOSFET is an incredibly versatile and powerful device that can be used for a variety of applications. It has a wide range of features and capabilities, and is ideal for high-power applications. It has an impressive range of thermal characteristics and its gate-threshold voltage is low enough to make it ideal for use in high frequency switching applications. Its high-saturated drain source voltage of 80v allows for a high current transfer efficiency and it is the perfect choice for motor control and power switching applications.

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