STI16NM50N Allicdata Electronics
Allicdata Part #:

STI16NM50N-ND

Manufacturer Part#:

STI16NM50N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 500V 15A I2PAK
More Detail: N-Channel 500V 15A (Tc) 125W (Tc) Through Hole I2P...
DataSheet: STI16NM50N datasheetSTI16NM50N Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 260 mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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STI16NM50N is a N-channel, enhancement mode power MOSFET designed for high volumn manufacturing. The device is optimized for low gate charge, low Coss, low Rds(on) and enhanced FT. It is suitable for use in a wide range of switching applications including high frequency DC-DC converters, motor control, and other applications requiring minimum switching losses.

Application Field: STI16NM50N is especially suitable for use in high frequency circuit applications such as DC-DC Converters, Motor Control and Inverters. It can also be used in low frequency circuits for synchronous rectification, load switch and other applications requiring low Rds(on).

Working Principle: When an N-channel MOSFET is used to pass a current in its “ON” state, a current flows through the device, between Drain and Source. This current has to cross a resistance, which is comprised of the internally resistive elements of the MOSFET, including the channel resistance and the output capacitance. The lower this resistance is (Rds(on)), the greater current can pass through the device. In Enhancement-mode MOSFETs, the Gate-Source voltage is varied to control the Rds(on). STI16NM50N uses a vertical double-diffused structure to minimize Rds(on), increasing the current that can flow through the device. The device has an outstanding Safe-Operating Area (SOA) which is greater than the industry standards.

The device features low Capacitance, low gate charge resulting in an improved Switching Frequency Response and lower Gate Switching losses (Fringing Capacitance and Miller Effect). The STI16NM50N also offers improved Drain to Source Breakdown Voltage (BVdss), allowing it to withstand a greater voltage drop between Drain and Source.

The STI16NM50N’s high-temperature operation enables a high power density design. Its integrated thermal protection (throttling) functionality helps ensure that the device isn’t damaged due to excessive temperature rising. The device also comes with an integrated Zener Diode for reverse bias protection.

In conclusion, the STI16NM50N is an ideal choice for high-power, high-frequency applications requiring excellent performance, low gate charge and low on-resistance. Its wide range of features and optimized design make it the perfect choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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