STI100N10F7 Allicdata Electronics
Allicdata Part #:

STI100N10F7-ND

Manufacturer Part#:

STI100N10F7

Price: $ 0.61
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET
More Detail: N-Channel 100V 80A Through Hole I2PAK (TO-262)
DataSheet: STI100N10F7 datasheetSTI100N10F7 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.55678
Stock 1000Can Ship Immediately
$ 0.61
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Mounting Type: Through Hole
Operating Temperature: --
Power Dissipation (Max): --
FET Feature: --
Vgs (Max): --
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 25V
Series: STripFET™
Rds On (Max) @ Id, Vgs: --
Drive Voltage (Max Rds On, Min Rds On): --
Current - Continuous Drain (Id) @ 25°C: 80A
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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STI100N10F7 Application Field and Working Principle

The STI100N10F7 is a super fast FET that has been widely used in many applications. Such as power management circuits、low switching losses、low blocking voltage, anti-spike, high datasheet temperature performance, and low on-state resistance. It is a field effect transistor (FET) that utilizes a gate input to control the flow of current through the device. This makes it ideal for many different types of circuits, including power supplies, power conditioning, switching, and low noise circuits.

Description

The STI100N10F7 is a N channel Enhancement Mode Silicon MOSFET (Metal Oxide Semiconductor FET). It is rated for 100V, 10A, and has an absolute maximum peak gate source voltage of 12V and an absolute maximum drain source voltage of ±30V. The on-state resistance of the device is typically 0.083Ω at a gate to source voltage of 8V. The t_d(on) (rise time) of the device is typically 12ns, and the t_d(off) (fall time) is typically 8ns at the same 8V gate to source voltage.

Working Principle

The STI100N10F7 works by manipulating the amount of current flowing through the transistor. When a voltage is applied between the gate and source terminals, it creates an electric field across the channel of the device, which changes its shape. This in turn changes the resistance of the channel, allowing current to flow through the device. The amount of current through the device can be varied by adjusting the gate to source voltage. As this voltage is increased, the current is increased, up to its maximum value of 10A.

Application Fields

The STI100N10F7 can be used in a wide range of applications, including power management, power conditioning, switching, and low noise circuits. It is particularly well-suited for high-frequency switching and high-power circuits, where low switching losses and low blocking voltage are important. It can also be used in high temperature applications, due to its high temperature performance.

Conclusion

The STI100N10F7 is a field effect transistor (FET) that uses a gate input to control the flow of current through it. It is a super fast FET with many attractive features such as low on-state resistance, anti-spike, and high temperature performance, which make it well-suited for many types of circuits. It is widely used in power management, power conditioning, switching, and low noise circuits.

The specific data is subject to PDF, and the above content is for reference

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