STI11NM80

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The STI11NM80 is a super low total gate charge, 80V N-channel MOSFET designed specifically to reduce switching losses and improve efficiency in automotive and audio applications, such as DC-DC converters, inverters, and motor drives. This advanced process-optimized MOSFET technology utilizes the highest energy efficiency available in today’s industry.

As an N-channel device, the STI11NM80 has an on-resistance of 3.4 mOhm, making it excellent for applications with low current requirements. With a totally gate charge of 20 nC and ultra-low input capacitance of 145 pF, the STI11NM80 operates with minimal transition times, allowing for greater efficiency and lower power consumption. Additionally, the device benefits from excellent thermal characteristics, high Junction-to-Case thermal resistance, at 0.58 degreeC/W, and is AEC-Q101 qualified.

The STI11NM80 exhibits a high power output, delivering up to 5A drain current. Its capability of switching up to 80V is extremely useful in a variety of applications. Its low gate charge makes it the ideal choice for applications that require a high switching frequency, while its on-resistance ensures low conduction loss.

The STI11NM80 is a surface mountable, robust MOSFET which provides excellent efficiency and excellent thermal performance. The device is well applied for power factor correction, switching mode power supply, and battery charger applications. In addition, its low gate charge, excellent efficiency, and robust construction enable the STI11NM80 to be employed in automotive, industrial and consumer electronic applications.

The working principle of the STI11NM80 is based on the \'MOSFET Insulated Gate principle\' or \'METOIS\', which makes use of an insulated gate to control the flow of current through the device. This helps to reduce power losses and offer excellent heat dissipation. The insulated gate is composed of four layers of material, two of which (an electrically insulating layer and a thin silicon layer) constitute the gate.

When a voltage is applied to the gate of the MOSFET, it forms an electric field across the thin layer of silicon, which in turn creates an extremely strong attraction between the electrons in the silicon and the gate electrode. This attraction lowers the energy barrier between the source and drain of the MOSFET, allowing for current to flow effectively.

In addition, the MOSFETs have a high attrition rate which reduces switching losses significantly, resulting in higher efficiency. The STI11NM80 is also designed with an integrated Schottky diode which further reduces switching losses and minimizes power dissipation.

Overall, the STI11NM80 is an efficient and reliable MOSFET, offering excellent thermal performance and low total gate charge. Its features make it the ideal choice for applications such as DC/DC converters and motor drives. Its application fields, working principles and reliability make the STI11NM80 a perfect choice for automotive and industrial specifications.

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