Allicdata Part #: | 497-13534-ND |
Manufacturer Part#: |
STI14NM50N |
Price: | $ 2.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N CH 500V 12A I2PAK |
More Detail: | N-Channel 500V 12A (Tc) 90W (Tc) Through Hole I2PA... |
DataSheet: | STI14NM50N Datasheet/PDF |
Quantity: | 910 |
1 +: | $ 2.33100 |
10 +: | $ 2.08278 |
100 +: | $ 1.70799 |
500 +: | $ 1.38307 |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 816pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 320 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STI14NM50N is a MOSFET (Insulated Gate Field Effect Transistor) designed for high current switching applications, such as power supply and DC motor controller designs. The STI14NM50N is manufactured using a specific process involving the integration of advanced vertical power MOSFET technology with mercury passivation and smart gate drive control. The MOSFET is available in a variety of package styles, including the I-PAK and SOIC packages.
The STI14NM50N is a N-channel MOSFET that is operated in depletion mode. The source and drain of the MOSFET are connected to two different levels of voltage, with the higher voltage being applied to the source. When voltage is applied to the gate of the MOSFET, a depletion region is created between the source and drain, blocking the flow of current through the channel and allowing for the MOSFET to be controlled. The STI14NM50N has an RDS on resistance of 4.5 Ohms, making it suitable for applications that require high current construction.
The STI14NM50N offers a number of features and benefits for use in design applications. It has a low on-resistance, making it suitable for high current applications. It also has a low total gate charge to reduce switching losses. The STI14NM50N also offers fast switching performance and high frequency operation, enabling it to be used in high frequency applications, such as switching power supplies and motor controllers. The MOSFET also has a built-in temperature protection circuit, protecting the MOSFET against thermal runaway.
The STI14NM50N can be used in a variety of applications, including power supplies, DC motors, LED lighting, and high voltage power supplies. It can be used in both switching and linear circuits, making it suitable for a wide range of applications. The MOSFET is also suited for applications which require high currents, such as reverse boost, buck, or other power topologies. Lastly, the STI14NM50N can also be used in high voltage applications, such as isolated gate drivers and isolated transformer drivers.
The STI14NM50N is designed for high current applications and it can be used to switch large amounts of current. The MOSFET also offers fast switching performance, allowing it to be used in applications that require switching at high frequencies. As a result, the STI14NM50N can be used in a variety of applications, making it a versatile and useful tool for design engineers.
The specific data is subject to PDF, and the above content is for reference
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