STI15NM60N Allicdata Electronics
Allicdata Part #:

STI15NM60N-ND

Manufacturer Part#:

STI15NM60N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 14A I2PAK
More Detail: N-Channel 600V 14A (Tc) 125W (Tc) Through Hole I2P...
DataSheet: STI15NM60N datasheetSTI15NM60N Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STI15NM60N is a 600 volt, 15 Amp, N-channel power MOSFET made in Silicon. It is a high gain power transistor that can be used in various power switching applications, particularly when reliability and high energy efficiency is important. These devices are widely used in the automotive industry, industrial power control, motor control, and power supplies. STI15NM60N is also a popular choice for battery management systems and other renewable energy applications.

A MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, is a three-terminal power semiconductor device typically used in voltage regulation and current control. It is composed of a layer of metal oxide with a channel in the middle, between two electrodes, the source and the drain. When a bias voltage is applied between the gate and the source, it creates a conductive channel between the source and the drain. This is known as the \'on\' state and the current flows through the device. When the bias voltage is reversed, the device is said to be in the \'off\' state and the current cannot flow.

The STI15NM60N is a powerful and reliable transistor optimized for high-temperature and high frequency applications. It features very low on-resistance and low gate charge characteristics, making it ideal for fast switching applications. As compared to other MOSFETs, the STI15NM60N offers a high level of immunity to current surges, EMI/RFI, and static discharge. This makes it suitable for use in harsh environments.

The STI15NM60N is a power MOSFET transistor with low power losses, high voltage blocking capability and fast switching speed. It has excellent thermal characteristics, meaning it will perform optimally even at high temperatures. This allows it to be used in demanding applications where reliability is of utmost importance.

The STI15NM60N is a popular choice for high-power switching applications. It is especially useful for converting DC voltage from a battery into AC for motor control, DC line regulation, power conversion, and power factor correction. This MOSFET can also be used in phase-shifting applications and pre-charge circuits in power supplies.

The STI15NM60N features an enhanced avalanche energy level compared to other MOSFETs of its type. It has also been designed to meet the increasing demands of modern power conversion and automotive systems in terms of current and power density. Its excellent thermal performance, low on-resistance, and high blocking voltage make it an ideal choice for high power applications.

In summary, the STI15NM60N is a versatile and reliable power MOSFET transistor. It has low power losses and high voltage blocking capability, making it suitable for a variety of power switching applications. Its excellent thermal performance, high avalanche energy level, and fast switching speed make it especially useful in high power and harsh environments. The STI15NM60N is a popular choice for power conversion and motor control applications, as well as pre-charge circuits in power supplies.

The specific data is subject to PDF, and the above content is for reference

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