STI14NM65N

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1300pF @ 50V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	45nC @ 10V
Series:	MDmesh™ II
Rds On (Max) @ Id, Vgs:	380 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The STI14NM65N is a high voltage N-Channel enhancement mode MOSFET designed for use in both consumer and industrial applications. With its low on-resistance and ultra-high speed switching characteristics, the STI14NM65N is great for power supplies, DC motor control and load switching. Constructed using advanced power semiconductor technologies, the STI14NM65N is a reliable and efficient solution for high current, high-efficiency and high switching frequencies. The STI14NM65N utilizes an Active Body Diode coupled with a class-leading low RDS(on) to reduce power wastage and switching loss. Its low on-resistance allows higher currents to be switched while maintaining excellent thermal characteristics. The STI14NM65N features low input and output, fast transient response time and wide temperature range of -55 to +125 Celsius. The minimal thermal resistance, Rth(j-c) over a wide range, allows for effective operation and reduced heat dissipation. In addition, the low on-resistance of the STI14NM65N helps minimize heat dissipation and improve power efficiency. The STI14NM65N is equipped with several safety features to minimize the possibility of over-voltage or over-temperature failures, as well as a high level of ESD protection for long-term reliable operation in potentially hazardous environments. The wide range of input voltages, from 12V to 300V, allows the STI14NM65N to be used in a variety of applications from DC-DC power conversion to high power motor control. The STI14NM65N features an ultra-high speed switching time of 100ns, making it ideal for high-frequency power-switching applications. To ensure that the maximum switching speed is achieved, the STI14NM65N is designed with a low gate-source capacitance. The STI14NM65N also features a wide-range of pulsed drain current levels, up to 150A, making it the perfect choice for high power applications such as solar inverters, DC motor drives and smart-grid technologies. In summary, the STI14NM65N is a high voltage N-channel MOSFET designed for a variety of demanding applications. With its robust design and low-resistance, the STI14NM65N is the perfect choice for a wide range of power supply and load-switching applications. Its high-speed switching and low thermal resistance makes the STI14NM65N ideal for high-frequency and high-current applications, such as motor drive and solar inverters. The STI14NM65N also offers excellent ESD-protection and a wide temperature range for reliable performance in harsh environments.

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