STI17NF25 Allicdata Electronics
Allicdata Part #:

STI17NF25-ND

Manufacturer Part#:

STI17NF25

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 250V 17A I2PAK
More Detail: N-Channel 250V 17A (Tc) 90W (Tc) Through Hole I2PA...
DataSheet: STI17NF25 datasheetSTI17NF25 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 90W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29.5nC @ 10V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 165 mOhm @ 8.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STI17NF25 is a single source, low-ohmic vertical power MOSFET. It has an N-channel chip configuration in a TO-220 power package. This MOSFET is designed for use in high current applications such as DC-DC converters, audio amplifiers, and switching regulators. It can also be used as a variable resistive load, as it effectively reduces the RDS(on) value. With its low thermal resistance and high current carrying capabilities, it is ideal for applications where low power loss and minimal device temperature rise is desired.

This device works by using the gate voltage to control the conduction of electrons from the drain to the source. The gate voltage is applied to a gate dielectric, which then creates a reverse biased field between the drain and source. This creates a depletion region, which acts as an insulator, preventing the flow of electrons. When the gate voltage is increased, more electrons can flow and this reduces the RDS(on) value of the MOSFET. This is known as enhancement mode operation. For depletion mode operation, the gate voltage is decreased, which decreases the electrons flowing and increases the RDS(on) value.

The STI17NF25 has a maximum drain-source voltage of 25 V and offers a typical on-resistance of 0.35 Ω and a maximum on-resistance of 0.5 Ω. It has a maximum drain current of 42 A, with a total power dissipation of 200 W. The MOSFET also has a low channel temperature rise, rating of 150 °C. The STI17NF25 can be operated at temperatures between -55 °C and 150 °C.

The STI17NF25 is typically used in high-current, high-power applications where the RDS(on) must be kept low. It is used in automotive applications such as DC-DC converters, audio amplifiers, and switching regulators. It can also be used in industrial, robotics, telecommunications and medical equipment. In these applications, the low thermal resistance and high current carrying capabilities of the MOSFET are utilized to minimize power loss, reduce device temperature rises and operate at temperatures more extreme than other MOSFETs.

In conclusion, the STI17NF25 is an ideal MOSFET for high current applications due to its low RDS(on) value, low thermal resistance and high current carrying capabilities. It is typically used in automotive, industrial, robotics, telecommunications and medical applications, and is designed to operate at temperatures up to 150°C and withstand up to 25V drain-source voltage.

The specific data is subject to PDF, and the above content is for reference

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