STI18NM60N

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1000pF @ 50V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 10V
Series:	MDmesh™ II
Rds On (Max) @ Id, Vgs:	285 mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	13A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

STI18NM60N is a N-channel MOSFET with a small footprint and high power efficiencies. This device is designed for use in power management applications, such as mobile and battery-operated electronic devices. It offers lower conduction and switching losses and improved energy saving compared to conventional MOSFETs. This paper will discuss the application field and working principle of this device, as well as its advantages and drawbacks.

Application Field

The STI18NM60N is a N-channel MOSFET, which is ideal for use in power management applications. This device can be used in DC-DC converters, motor drives, and motor control systems. It can also be used in battery-operated portable systems, such as mobile phones, PDAs and music players. In addition, this device can be used as a switch in automotive applications, as well as in power supplies and solar inverters. The main advantages of using this device in power management applications are its small footprint, low conduction and switching losses, improved energy saving, and high power efficiency. These advantages make it an ideal device for use in these applications, as it offers improved power efficiency compared to conventional MOSFETs.

Working Principle

The STI18NM60N is an N-channel MOSFET, which is composed of three main components: the gate, the source and the drain. The source and the drain are connected to the semiconductor substrate, while the gate is connected to the voltage source. When a positive voltage is applied to the gate of the STI18NM60N, holes (positive charges) are injected into the channel region. This causes the conductivity of the channel to increase, which in turn increases the current flow. On the other hand, when a negative voltage is applied to the gate, electrons (negative charges) are injected into the channel region, which reduces the conductivity of the channel and decreases the current flow. This is the basic way that a MOSFET works, and it is the same principle of operation for the STI18NM60N. By increasing or reducing the voltage applied to the gate, it is possible to control the current flow through the device. This makes it ideal for use in applications such as DC-DC converters, motor drives and other power management applications.

Advantages and Drawbacks

The main advantages of using the STI18NM60N are its small footprint, low conduction and switching losses, and improved energy saving compared to conventional MOSFETs. This device can also handle higher current ratings, up to 30A, which makes it suitable for use in high-power applications. Additionally, this device offers improved power efficiency compared to conventional MOSFETs, which makes it an ideal choice for power management applications.The main drawback of this device is its relatively high gate-source capacitance, which can lead to increased power dissipation and reduced efficiency. Additionally, because this device is a N-channel device, it can only be used in power management applications which require an N-channel MOSFET.

Conclusion

The STI18NM60N is an N-channel MOSFET with a small footprint and high power efficiencies. This device is designed for use in power management applications, such as mobile and battery-operated electronic devices. It offers lower conduction and switching losses and improved energy saving compared to conventional MOSFETs, which makes it ideal for these applications. The device also offers improved power efficiency compared to conventional MOSFETs, which makes it an ideal choice for power management applications. However, it does suffer from high gate-source capacitance, which can lead to increased power dissipation and reduced efficiency. Nevertheless, the STI18NM60N is a highly efficient MOSFET which can offer improved power efficiency in power management applications.

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