Allicdata Part #: | 497-15550-5-ND |
Manufacturer Part#: |
STI18N65M2 |
Price: | $ 1.72 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 12A I2PAK |
More Detail: | N-Channel 650V 12A (Tc) 110W (Tc) Through Hole I2P... |
DataSheet: | STI18N65M2 Datasheet/PDF |
Quantity: | 850 |
1 +: | $ 1.56240 |
50 +: | $ 1.25887 |
100 +: | $ 1.13293 |
500 +: | $ 0.88117 |
1000 +: | $ 0.73011 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | MDmesh™ M2 |
Rds On (Max) @ Id, Vgs: | 330 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STI18N65M2 belongs to the family of insulated-gate field-effect transistors (IGFETs). They are also known as metal oxide-semiconductor field-effect transistors (MOSFETs). These components are used in electronic circuits to provide voltage- or current-controlled amplification of signals; this is done by varying the resistance of the channel, which gives rise to the name “field-effect.” The STI18N65M2 is a single-gate MOSFET, meaning that it has only one electrically-controlled gate region, which makes it suitable for use in a variety of applications.
In most cases, a MOSFET is used in an application where it is required to act as a switch, such as a relay. It is generally more cost-effective than a relay, and because of its smaller size, it can be used in many situations where the relative amount of power is limited. A single-gate MOSFET is used in many application fields, including power conversion, power management, motor control, and instrumentation.
The STI18N65M2 single-gate MOSFET has a relatively low on-resistance and high current capability, which make it suitable for use in power applications where switches are needed that have fast switching times and large amounts of power dissipation. Its operating voltage ranges from VDD- 30V to VDD + 30V. In addition, it has a simple common-source configuration, which makes it easier to use.
The working principle of a MOSFET is based on the fact that the current flow between two contacts changes with the applied voltage. When a small voltage is applied to the gate terminal of the MOSFET, it changes the resistance of the channel, which controls the current flow between the source and drain terminals. This allows the MOSFET to act as either a switch, amplifier, or both. As the potential of the terminal increases, the current through the channel is further reduced.
The STI18N65M2 single-gate MOSFET has several features that make it suitable for use in a wide range of applications. These include its low on-resistance, high operating temperature range, protection against reverse current, and adjustable current limiting. These features make the STI18N65M2 suitable for use in both commercial and industrial applications, such as motor control, instrumentation, power conversion, and power management.
The STI18N65M2 single-gate MOSFET is an excellent choice for many applications where high current capability and fast switching times are needed. It has several advantages, including its simple configuration, low on-resistance, and adjustable current limit. Moreover, its operating temperature range is suitable for many industrial applications. As such, the STI18N65M2 is a reliable component for power conversion, motor control, instrumentation, and power management.
The specific data is subject to PDF, and the above content is for reference
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