STI12NM50N

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The STI12NM50N power MOSFET is a member of STMicroelectronics\' advanced PowerMESH™ family of advanced power MOSFETs. It is specifically designed for high power applications such as power conversion, power distribution, high power amplifiers and automotive safety-critical systems. The STI12NM50N is a MOSFET featuring very low gate and drain to source capacitance, very low on-state resistance and high surge current and avalanche energy ride-through capability.

The STI12NM50N is a type of field effect transistor (FET) and part of the powerMESH™ family of advanced MOSFETs. As a type of FET, field effect transistors are devices that control the flow of current between their source and drain. In case of the STI12NM50N, this is done by the application of a voltage to the gate terminal which creates an electrical field that influences the conduction of electrons across the device. By controlling this electrical field, the current flow can be manipulated.

The STI12NM50N has been designed to accommodate the requirements of a range of high power applications. Its low gate and drain-to-source capacitance make it suitable for high frequency switching and control applications, while its low on-state resistance allows for high current conduction. Its low gate charge improves switching times, making the FET suitable for high speed switching applications. Furthermore, its high surge current capacity and robust avalanche energy ride-through capability make it well-suited for power conversion, power distribution and automotive safety-critical systems.

The STI12NM50N is a MOSFET suitable for applications requiring excellent energy efficiency and fast switching speeds. The FET has been designed to provide excellent energy efficiency due to its low gate charge and low on-state resistance. This provides lower losses and better efficiency in applications such as motor drives and power conversion. The fast switching times enabled by the FET’s low gate capacitance improve the accuracy of signal processing and reduce the switching losses inherent in high current switching applications.

The STI12NM50N is a high performance power MOSFET designed to provide excellent energy efficiency and fast switching speeds for a range of high power applications. Its low gate and drain-to-source capacitance, low on-state resistance, high surge current and robust avalanche energy ride-through capability make it ideal for use in power conversion, power distribution, high power amplifiers and automotive safety-critical systems.

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