STP13N60M2 Allicdata Electronics
Allicdata Part #:

497-13842-5-ND

Manufacturer Part#:

STP13N60M2

Price: $ 1.89
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 11A TO-220
More Detail: N-Channel 600V 11A (Tc) 110W (Tc) Through Hole TO-...
DataSheet: STP13N60M2 datasheetSTP13N60M2 Datasheet/PDF
Quantity: 422
1 +: $ 1.89000
10 +: $ 1.83330
100 +: $ 1.79550
1000 +: $ 1.75770
10000 +: $ 1.70100
Stock 422Can Ship Immediately
$ 1.89
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: MDmesh™ II Plus
Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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STP13N60M2 is the most commonly used MOSFETs in the market. It is a Power MOSFET transistor with a single Vdss (drain-source voltage) and a single Id (drain current) of 13A. The STP13N60M2 is a N-channel enhancement type MOSFET transistor used for many applications such as DC-DC converters, brushless motor drives, and uninterruptible power supplies.

The STP13N60M2 is suitable for a variety of applications including high-efficiency switching, low on-state and switching losses, rapid switching, low control power and fast turn-off. It has an insulated gate and an exact breakdown voltage for low gate drive power loss and minimal ringing.

The STP13N60M2 is suitable for use in a wide range of applications and devices, including PWM switching, high-frequency switching and high-efficiency applications. It has a wide operating temperature range of -55°C to +175°C and can operate up to a maximum temperature of 175°C.

The STP13N60M2 has an adjustable current gain rate which increases with increased temperatures, making it more suitable for applications that typically encounter very high temperatures. It also has a low noise level and a fast switching time of less than 25 microseconds.

The working principle of the STP13N60M2 is based on the principle of two terminal conductivity between a source and a drain terminal. The gate electrode acts as a control region where a voltage is applied between the gate and the source to control the flow of current between the drain and the source electrodes. The drain voltage compensates for the gate voltage to provide the flow of current and the source voltage is maintained constant.

The STP13N60M2 is used in a variety of applications like switching motor drives, DC-DC converters and PWM switching. It is also used in DC/AC power supplies, high frequency switching and switching circuits for audio, video, and wireless communications.

The STP13N60M2 is a popular device due to its low on-state losses, low gate drive power loss and fast switching time. Its wide operating temperature range and adjustable current gain rate make it suitable for use in high temperature applications. The STP13N60M2 is an ideal choice for applications such as DC-DC converters, brushless motor drives, and uninterruptible power supplies.

The specific data is subject to PDF, and the above content is for reference

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