STP13N65M2 Allicdata Electronics
Allicdata Part #:

497-15555-5-ND

Manufacturer Part#:

STP13N65M2

Price: $ 1.42
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 10A TO220
More Detail: N-Channel 650V 10A (Tc) 110W (Tc) Through Hole TO-...
DataSheet: STP13N65M2 datasheetSTP13N65M2 Datasheet/PDF
Quantity: 780
1 +: $ 1.42000
10 +: $ 1.37740
100 +: $ 1.34900
1000 +: $ 1.32060
10000 +: $ 1.27800
Stock 780Can Ship Immediately
$ 1.42
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: MDmesh™ M2
Rds On (Max) @ Id, Vgs: 430 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STP13N65M2 is a P-Channel Low-Side MOSFET. It is a single N-channel MOSFET switch. In this MOSFET, N-type MOSFETs are used as the switching elements. It has charge carrier lifetime of 30s at maximum current and 13A continuous drain current.

In terms of application fields, STP13N65M2 MOSFETs can be used in power supplies, lighting, digital modes and power industrial appliances,as it has an operating temperature range from -55°C to 150°C. It is also suitable for AC/DC converters because of its low conduction loss. This makes it well suited for application with wide temperature ranges and high power.

STP13N65M2 works on principle of flow of electrons. When a voltage is applied between gate and source, the electron will flow from source to drain. This flow results in current from source to drain, that is known as drain current. The voltage applied between gate and source is known as gate voltage. The amount of drain current increases with increase in gate voltage.

In addition, STP13N65M2 has an efficient body diode. This diode can be used to protect the ICs in the circuit, serving to regulate and limit the applied source-drain voltage. Furthermore, STP13N65M2 has a high impedance input and fast switching speed, allowing the MOSFET to be used in high-switching frequency circuits.

In conclusion, STP13N65M2 is an effective and powerful MOSFET switch for low-side and high side applications, able to operate over a wide temperature range and with low conduction losses.

The specific data is subject to PDF, and the above content is for reference

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