
Allicdata Part #: | 497-15555-5-ND |
Manufacturer Part#: |
STP13N65M2 |
Price: | $ 1.42 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 10A TO220 |
More Detail: | N-Channel 650V 10A (Tc) 110W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 780 |
1 +: | $ 1.42000 |
10 +: | $ 1.37740 |
100 +: | $ 1.34900 |
1000 +: | $ 1.32060 |
10000 +: | $ 1.27800 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 590pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | MDmesh™ M2 |
Rds On (Max) @ Id, Vgs: | 430 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP13N65M2 is a P-Channel Low-Side MOSFET. It is a single N-channel MOSFET switch. In this MOSFET, N-type MOSFETs are used as the switching elements. It has charge carrier lifetime of 30s at maximum current and 13A continuous drain current.
In terms of application fields, STP13N65M2 MOSFETs can be used in power supplies, lighting, digital modes and power industrial appliances,as it has an operating temperature range from -55°C to 150°C. It is also suitable for AC/DC converters because of its low conduction loss. This makes it well suited for application with wide temperature ranges and high power.
STP13N65M2 works on principle of flow of electrons. When a voltage is applied between gate and source, the electron will flow from source to drain. This flow results in current from source to drain, that is known as drain current. The voltage applied between gate and source is known as gate voltage. The amount of drain current increases with increase in gate voltage.
In addition, STP13N65M2 has an efficient body diode. This diode can be used to protect the ICs in the circuit, serving to regulate and limit the applied source-drain voltage. Furthermore, STP13N65M2 has a high impedance input and fast switching speed, allowing the MOSFET to be used in high-switching frequency circuits.
In conclusion, STP13N65M2 is an effective and powerful MOSFET switch for low-side and high side applications, able to operate over a wide temperature range and with low conduction losses.
The specific data is subject to PDF, and the above content is for reference
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