| Allicdata Part #: | 497-6117-5-ND |
| Manufacturer Part#: |
STP150NF55 |
| Price: | $ 3.17 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 55V 120A TO-220 |
| More Detail: | N-Channel 55V 120A (Tc) 300W (Tc) Through Hole TO-... |
| DataSheet: |  STP150NF55 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 3.17000 |
| 10 +: | $ 3.07490 |
| 100 +: | $ 3.01150 |
| 1000 +: | $ 2.94810 |
| 10000 +: | $ 2.85300 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4400pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 190nC @ 10V |
| Series: | STripFET™ II |
| Rds On (Max) @ Id, Vgs: | 6 mOhm @ 60A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The STP150NF55 is an advanced insulated-gate bipolar transistor (IGBT). It is a three-terminal silicon switching device that has multiple applications ranging from motor drives to household appliances. The STP150NF55 is particularly suited for high power applications, due to its superior switching characteristics and low-on-state resistance.
Application Field
The STP150NF55 can be used for many applications such as dimming, motor drives, audio, and power inverters. In dimming applications, this device provides a fast response and excellent linearity performance. It is also suitable for motor drive applications such as AC motor drives, fans, pumps, and motor controllers for elevators and escalators.
The STP150NF55 is also used in audio applications due to its low-noise operation. In power inverters, the STP150NF55 provides energy savings through its low power consumption and fast switching capabilities.
Working Principle
The device operates using the principle of insulated-gate bipolar technology (IGBT). An insulated-gate bipolar transistor is a semiconductor device comprised of p-type and n-type doped semiconductor materials. The gate of the device is insulated from the main current flow path by an insulating material, usually silicon dioxide. When a positive voltage is applied to the gate of the device, current flows through the semiconductor materials resulting in low on-state resistance.
The device also features an integrated free-wheel diode which eliminates the need for an external diode when used in applications such as motor drives. This feature enables the STP150NF55 to provide superior switching performance with low losses.
In addition, the device is also capable of providing high voltage, high current operation with low distortion due to its low output capacitance. This feature makes it ideal for demanding applications such as audio, power inverters, and motor drives.
The STP150NF55 is a versatile device with numerous applications ranging from dimming and motor drives to audio and power inverters. Its advanced insulated-gate bipolar technology, low-on-state resistance, integrated free-wheel diode, and low output capacitance make it ideal for high power applications.
The specific data is subject to PDF, and the above content is for reference
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