STP150NF55 Allicdata Electronics
Allicdata Part #:

497-6117-5-ND

Manufacturer Part#:

STP150NF55

Price: $ 3.17
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 55V 120A TO-220
More Detail: N-Channel 55V 120A (Tc) 300W (Tc) Through Hole TO-...
DataSheet: STP150NF55 datasheetSTP150NF55 Datasheet/PDF
Quantity: 1000
1 +: $ 3.17000
10 +: $ 3.07490
100 +: $ 3.01150
1000 +: $ 2.94810
10000 +: $ 2.85300
Stock 1000Can Ship Immediately
$ 3.17
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 6 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STP150NF55 is an advanced insulated-gate bipolar transistor (IGBT). It is a three-terminal silicon switching device that has multiple applications ranging from motor drives to household appliances. The STP150NF55 is particularly suited for high power applications, due to its superior switching characteristics and low-on-state resistance.

Application Field

The STP150NF55 can be used for many applications such as dimming, motor drives, audio, and power inverters. In dimming applications, this device provides a fast response and excellent linearity performance. It is also suitable for motor drive applications such as AC motor drives, fans, pumps, and motor controllers for elevators and escalators.

The STP150NF55 is also used in audio applications due to its low-noise operation. In power inverters, the STP150NF55 provides energy savings through its low power consumption and fast switching capabilities.

Working Principle

The device operates using the principle of insulated-gate bipolar technology (IGBT). An insulated-gate bipolar transistor is a semiconductor device comprised of p-type and n-type doped semiconductor materials. The gate of the device is insulated from the main current flow path by an insulating material, usually silicon dioxide. When a positive voltage is applied to the gate of the device, current flows through the semiconductor materials resulting in low on-state resistance.

The device also features an integrated free-wheel diode which eliminates the need for an external diode when used in applications such as motor drives. This feature enables the STP150NF55 to provide superior switching performance with low losses.

In addition, the device is also capable of providing high voltage, high current operation with low distortion due to its low output capacitance. This feature makes it ideal for demanding applications such as audio, power inverters, and motor drives.

The STP150NF55 is a versatile device with numerous applications ranging from dimming and motor drives to audio and power inverters. Its advanced insulated-gate bipolar technology, low-on-state resistance, integrated free-wheel diode, and low output capacitance make it ideal for high power applications.

The specific data is subject to PDF, and the above content is for reference

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