STP130N6F7

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STP130N6F7 is a E-mode vertical power MOSFET that employs a vertical cell structure and an insulated gate system to provide an incredibly efficient power solution. It is designed for applications that require a high switching speed and low on-resistance needed in high-current, low-voltage, conduction-cooled applications. It is available in the industry standard TO-220 package with a continuous DC current rating of up to 30A and drain-source voltage up to 650V.

Applications

The STP130N6F7 is typically used for a wide variety of applications include power switching, consumer power management applications, DC-DC converters and high-current, high-frequency switching. It is also ideal for applications requiring high frequency switching, such as inverters, solar microinverters and uninterruptible power supplies. It is also well suited for automotive, industrial, computer and consumer and power management applications.

Mechanics

The STP130N6F7 is available in the TO-220 package and is typically sold as a single component. It has a single-sided non-isolated mounting system that allows easy installation. It features a lightweight and durable construction with a high thermal resistance. It also features a wide range operating temperature range, a wide turn-on/turn-off time range, and low gate threshold voltage.

Working Principle

The STP130N6F7 is a vertical power MOSFET that implements the E-mode (enhancement-mode) operation. It operates by creating two junctions between the source and drain terminals when the Gate pin is exposed to a positive or negative potential. When this occurs, the junctions between the source and drain terminals are activated by the Gate potential and in turn the MOSFET is turned on and off. This allows the MOSFET to switch current between the drain and source terminals with high efficiency and low resistance.

The STP130N6F7 also features an insulated gate. This insulated gate prevents direct current flow through the Gate, minimizing charge buildup and offering a higher level of protection against external noise and power fluctuations. The insulated gate also ensures an efficient current switching process, which provides a more stable and reliable operation. In addition, the insulated gate provides a low gate turn-on voltage and requires a low gate turn-off voltage for achieving faster switchings for higher frequencies.

Benefits

The STP130N6F7 offers a combination of many benefits that make it an ideal solution for power switching applications. It offers a high switching speed, low on-resistance and temperature stability for efficient operation; a wide operating temperature range for reliable operation; an insulated gate system for protection against external noise and power fluctuations; a low gate turn-on voltage and low gate turn-off voltage for faster switching; and a wide turn-on/turn-off time range for a wide variety of applications. The STP130N6F7 is also easy to install and provides a lightweight, durable construction.

Conclusion

The STP130N6F7 is a high-performance E-mode vertical power MOSFET designed for applications that require a high switching speed and low on-resistance. It offers a wide range of benefits, such as a wide operating temperature range, a wide turn-on/turn-off time range, and low gate threshold voltage, allowing for reliable and efficient power switching. It is ideal for applications such as power switching, consumer power management applications, DC-DC converters, and high-current, high-frequency switching. It is available in the industry standard TO-220 package with a continuous DC current rating of up to 30A and drain-source voltage up to 650V.

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