STP13NK50Z Allicdata Electronics
Allicdata Part #:

497-7504-5-ND

Manufacturer Part#:

STP13NK50Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 500V 11A TO-220
More Detail: N-Channel 500V 11A (Tc) 140W (Tc) Through Hole TO-...
DataSheet: STP13NK50Z datasheetSTP13NK50Z Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STP13NK50Z transistor is a N-channel mosfet developed by ST Microelectronics. It is part of the SuperFET family and is designed for utilization in medium and high power applications, such as load switching and power supplies. The device comes in a small, low profile PowerFLAT 5x6 SMD package.

Application field

The STP13NK50Z is suitable for many different uses in a variety of applications. It is often used as a switch for medium and high power load switching applications such as industrial, automotive and consumer. It can be used in high current DC-DC converters as a high-side switch or in power supply circuits as a low-side switch. The device is also often used in HVAC systems, switching relays and other applications which require high power switching.

Working Principle

The STP13NK50Z utilizes the principles of enhancement-mode MOSFETs. In this type of MOSFET, the transistor is turned on by a voltage applied to its gate. The current flowing through the device is proportional to this voltage, allowing the device to be used to control the current through the circuit. The device is designed to have low conduction and switching losses due to its advanced EMI and ESD protection features.

The STP13NK50Z features a built-in temperature sensor which is used to limit the power dissipation of the device in order to protect it from thermal overloads. The device also features an active over-temperature protection (OTP) circuit which will shut down the device if it reaches a certain temperature. This helps to ensure that the device will not be damaged in the event of a thermal overload.

The advantage of the STP13NK50Z is its high speed switching capability. The device features low gate charge, low input capacitance and fast switching speed. This makes it suitable for applications requiring fast switching, such as motor control and soft switching.

Conclusion

The STP13NK50Z is a N-Channel MOSFET designed for medium and high power applications. It has excellent EMI and ESD protection, high switching speed and temperature protection, making it ideal for high current load switching and power supply circuits.

The specific data is subject to PDF, and the above content is for reference

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