Allicdata Part #: | 497-13109-5-ND |
Manufacturer Part#: |
STP18N65M5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 15A TO-220 |
More Detail: | N-Channel 650V 15A (Tc) 110W (Tc) Through Hole TO-... |
DataSheet: | STP18N65M5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1240pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 220 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP18N65M5 is a part of the Power MOSFET family of N-channel MOSFET transistors by STMicroelectronics. The device is engineered to provide superior performance in applications such as DC/DC convertors, high current switching and motor control. It is designed with an advanced process technology to provide fast switching performance and outstanding power efficiency. It has a drain-source VDSS rating of 650V and a maximum RDS(on) of 0.65 Ohms.
Features
- 650V N-channel power MOSFET
- Low RDS(on) for high efficiency
- Superior switching performance
- High peak current capability
- Low gate charge
- RoHS and halogen-free compliant
- Zero threshold
Applications
- DC/DC convertors
- High current switching
- Motor control
Working Principle
The STP18N65M5 is an N-channel power MOSFET that belongs to the Power MOSFET family of transistors by STMicroelectronics. It is designed with a MOSFET structure to allow for fast switching performance and excellent power efficiency. The device works on the principle of the MOSFET, where a MOSFET is made of two main parts: the source and the drain. When a voltage is applied to the gate of the MOSFET, the electrical field generated will open the gate, allowing electrons to flow from the source to the drain. This allows current to flow through the device, and it is then dissipated as heat. The current through the MOSFET is controlled by the gate voltage, allowing the user to control the power dissipation of the device.
The STP18N65M5 also has a built-in ESD protection circuit, which helps to protect the device from harm due to electrostatic discharge. This protection circuit is designed to activate when the ESD voltage reaches a certain level and will help to prevent damage due to ESD. The device also has a built-in thermal shutdown circuit, which helps to protect the device from overheating.
The STP18N65M5 has a wide variety of applications, such as controlling motors, DC/DC convertors, and high-current switching. It is designed with advanced process technology to provide fast switching performance and excellent power efficiency, making it an ideal device for many applications.
The specific data is subject to PDF, and the above content is for reference
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