Allicdata Part #: | STP17N80K5-ND |
Manufacturer Part#: |
STP17N80K5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CHANNEL 800V 14A TO220 |
More Detail: | N-Channel 800V 14A (Tc) 170W (Tc) Through Hole TO-... |
DataSheet: | STP17N80K5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 170W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 866pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | MDmesh™ K5 |
Rds On (Max) @ Id, Vgs: | 340 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STP17N80K5 is a power MOSFET developed by ST Microelectronics. It is a single N-channel power field effect transistor (FET). This type of MOSFET is designed to offer high power efficiency, maximum capability and robust performance. The advanced technology of STP17N80K5 also helps to maximize power efficiency and provide good device performance in a wide range of applications.
The STP17N80K5 is a vertical power MOSFET with a drain bias of 500V and a max drain current of 17A; it is capable of carrying a high amount of current and is suitable for various power application scenarios. It is a voltage controlled device featuring low on-resistance and ESD protection, as well as avalanche current rating, providing a reliable performance for various high power applications. The STP17N80K5 has a high input impedance, which is suitable for high voltage switching.
In terms of its application field, the STP17N80K5 power MOSFET can be used in various switching applications, such as power supply, DC-DC converters, inverters, and package converter applications. It is also used in low-power logic level control applications, as well as heavy-duty industrial applications. It has a high switching speed and low on-resistance, making it suitable across a wide variety of applications.
The working principle of the STP17N80K5 is based on the transfer of electrons. It works by controlling the current flow between two terminals (source and drain) through an electrical field. By varying the applied voltage, the MOSFET can be used as an analog switch, allowing a small control voltage to alter a larger load voltage. This is a common way to control high power loads. The gate voltage of STP17N80K5 is usually between 4.5 to 5.5V, which is used to reduce the threshold voltage.
The STP17N80K5 is designed with a low on-resistance to maximize conduction performance; it also features a lower gate capacitance that leads to better output characteristics, making it suitable for high-power applications. It also has a long operating life, as it can handle voltages up to 500V and a temperature range of -50°C to 150°C. The wide temperature range makes the STP17N80K5 suitable for a variety of industrial, automotive, and consumer electronics applications.
In conclusion, the STP17N80K5 is a powerful single N-channel power MOSFET that is suitable for various power applications. It is designed to provide high current capability, low on-resistance, good output characteristics and long operating life. It has a wide voltage and temperature range, making it suitable for medium to high power applications in automotive, industrial, and consumer electronics markets.
The specific data is subject to PDF, and the above content is for reference
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