STP13NM60N

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	90W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	790pF @ 50V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	MDmesh™ II
Rds On (Max) @ Id, Vgs:	360 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The STP13NM60N is a powerful N-channel MOSFET (metal oxide semiconductor field-effect transistor) designed and manufactured by STMicroelectronics. It is suitable for a wide range of applications in both consumer and industrial electronics. It is a single MOSFET with both source and drain leads, making it suitable for use in circuit designs that require both high efficiency and simple switching.The STP13NM60N is a surface-mount single MOSFET with an integrated insulation layer and ultra-thick gate oxide between the source and the drain region and a robust normally-off structure. It has a low gate-source charge gate capacitance, making it ideal for high-speed switching applications. The devices are provided in both D2PAK and SOIC packages for surface-mount applications.The STP13NM60N has a typical VGS(th) of 4.0V and maximum VGS of +20 V, which makes it suitable for voltage-sensitive applications, such as in switching power supplies. The maximum drain-source breakdown voltage is 700V, making it suitable for a wide range of power supplies and other power applications. The device has a maximum continuous drain current of 13A, making it suitable for high-power applications.The STP13NM60N is designed to operate with low gate-drain and gate-source capacitance to minimize switching losses. The device has an ultra-low on-resistance of 0.47ω, which enables it to deliver high switching speeds and efficiency in a wide range of frequencies. The low gate-drain capacitance makes it ideal for applications that require fast switching speeds, such as in switching power supplies, DC-DC converters, motor control circuits, and other high-speed/high-voltage applications.The working principle of the STP13NM60N is based on the MOSFET’s function as an inverter. When a voltage is applied to the MOSFET’s gate, an electric field is generated, which enables a flow of electrons between the source and drain terminals. The greater the applied voltage, the more electrons flow and the higher the current that flows through the device. The device has a power MOSFET structure, which enables it to handle large currents efficiently and with minimal losses.The STP13NM60N is a highly efficient single MOSFET with an extremely low on-resistance and a high power-handling capability, making it suitable for a wide range of consumer and industrial applications. The device is designed to operate with low gate-drain and gate-source capacitance to minimize switching losses, and its robust normally-off structure enables it to be used in a wide range of voltage-sensitive applications. The device is available in both D2PAK and SOIC packages, making it suitable for use in both surface-mount and through-hole design applications.

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