Allicdata Part #: | 497-16021-5-ND |
Manufacturer Part#: |
STP160N3LL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 120A TO-220AB |
More Detail: | N-Channel 30V 120A (Tc) 136W (Tc) Through Hole TO-... |
DataSheet: | STP160N3LL Datasheet/PDF |
Quantity: | 1996 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 4.5V |
Series: | STripFET™ H6 |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Introduction: STP160N3LL is a silicon N-channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field Effect Transistors) designed to enhance voltage, current, and frequency performance. It is a reliable, high performance, and cost-effective solution for a wide range of automotive and industrial applications. The MOSFET features a low RDS (on) on-resistance that provides high efficiency and power dissipation. It is available in a low-thermal-resistance TO-220F package, offering excellent thermal and electrical performance.
Applications: STP160N3LL devices are widely used in automotive and industrial applications such as: switching, motor and solenoid control, power converters, digital and medical electronics, inverters, high-performance lighting, and lighting control. It is capable of handling large voltages between 5V and 60V for efficient power management, and offers fast switching speeds for improved throughput. The device is suitable for use in applications such as automotive systems, power conversion, and power flow control.
Working Principle: STP160N3LL MOSFETs use a gate electrode to control the conductivity of the device. When a voltage is applied to the gate electrode, it induces a field in the semiconductor material that modulates the current passing through the device. This allows for extremely precise control of current, making it the preferred choice for many high-performance applications. In addition, the MOSFETs dissipate much less heat than comparable devices, making them extremely efficient.
Conclusion: STP160N3LL MOSFETs are a small but powerful way to cover your circuit board needs. The device features low R DS(on) on-resistance and high efficiency, as well as fast switching speeds, making it the right choice for many industrial and automotive applications. This device is well-suited for power management and conversion, while its small size and low thermal resistance make it ideal for tight spaces.
The specific data is subject to PDF, and the above content is for reference
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