STP12NK30Z Allicdata Electronics
Allicdata Part #:

497-7502-5-ND

Manufacturer Part#:

STP12NK30Z

Price: $ 0.73
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 300V 9A TO-220
More Detail: N-Channel 300V 9A (Tc) 90W (Tc) Through Hole TO-22...
DataSheet: STP12NK30Z datasheetSTP12NK30Z Datasheet/PDF
Quantity: 1000
1 +: $ 0.73000
10 +: $ 0.70810
100 +: $ 0.69350
1000 +: $ 0.67890
10000 +: $ 0.65700
Stock 1000Can Ship Immediately
$ 0.73
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 90W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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STP12NK30Z Application Field and Working Principle

STP12NK30Z is a N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor), with a drain current of 12A. It\'s a three-terminal semiconductor device, mainly used for voltage control on higher current. It is mainly used in switch mode power supply, inverter, and motor speed control applications. STP12NK30Z is made of high quality silicon material and it has excellent surge current capability, making it a reliable electronic component.

Working Principle

In general, MOSFET works on the principle of variable capacitor. A MOSFET has four terminals at its core. It has a source, a drain, a gate, and a bulk terminal. The gate voltage controls the output voltage, while the source and drain terminal provide the input and output current. When a small current is applied to the gate terminal, the gate is fully activated and the transistor is in its active region. The overall current through the transistor is proportional to the gate voltage. The MOSFET will break down at about five volts and completely shuts off when the gate voltage reaches critical limit.

The physical structure of MOSFET consists of a thin layer of P-type silicon material sandwiched between two N-type layers of silicon material. The P-type layer forms the gate and the two N-type layers form the source and drain. When a voltage is applied to the gate, an electrical field is created, this in turn forces holes in the P-type silicon layer to move toward the N-type material, creating an inversion layer. The inversion layer forms a low resistance channel, allowing high currents to flow through the transistor. The same principle is followed in STP12NK30Z.

Applications

STP12NK30Z is mainly used in high power circuits, such as switch mode power supply, inverter circuits, motor speed control and other high current applications. It is also used in audio amplifiers, voltage regulators, and various other power supply designs. It is capable of providing high current with low on-state resistance. Moreover, it has a high impedance gate that is capable of withstanding high-voltage pulses without damaging the transistor. It is a reliable and efficient device, offering excellent performance and reliability.

To summarize, STP12NK30Z is a three-terminal N-Channel MOSFET, mainly used for voltage control in higher current applications. It is made of high quality silicon material and has excellent surge current capability. STP12NK30Z has a wide range of applications, including switch mode power supply, inverter, motor speed control, audio amplifiers, voltage regulators, and various other power supply designs.

The specific data is subject to PDF, and the above content is for reference

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