STP15N95K5

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The STP15N95K5 is an N-Channel enhancement-mode power field-effect transistor (FET). This type of transistor is widely used in applicaitons that require high-speed switching and high voltage/current capabilities. It is also known as a metal-oxide-semiconductor field-effect transistor (MOSFET). The STP15N95K5 has been designed for use in a wide variety of applications, including high-power motor control, switching and switching regulators, rectification, and signal processing.The STP15N95K5 is manufactured from semiconductor material typically in the form of a silicon die. Its structure, size, and design all play a role in its electrical performance, which determines its application field. The STP15N95K5 has a maximum operating temperature of 150 degrees Celsius and features a maximum drain current of 15A, a maximum source-drain voltage of -20V to +800V, and an on-resistance of 0.3ohms.At the heart of the STP15N95K5 is an enhancement-mode FET, known as a Metal-Oxide-Gate (MOG). The MOG contains an insulated gate that forms a biased junction between the source and drain electrodes. When a gate voltage is applied, the MOG is turned on, allowing electrons to flow from the source to the drain. This phenomenon is known as the MOSFET effect, which is used for switching applications.The STP15N95K5 uses a depletion-mode FET as its gate, which is formed by doping the gate region with a small amount of an opposite type of alloy from the rest of the FET structure. This depletion-mode FET is commonly referred to as a Super Junction-MOSFET (SJ-MOSFET), which provides a high-quality interface between the switching device and the load.The STP15N95K5 is also unique in that it uses technology known as Active Body Bias (ABB) to increase its switching speed. ABB can be used to adjust the on-resistance of the MOSFET by sensing the load current and applying a bias voltage to the gate to control the drain current.In summary, the STP15N95K5 is a powerful N-Channel enhancement-mode FET that is suitable for high-power motor control, switching and switching regulators, rectification, and signal processing. It is manufactured from a high-quality silicon die and uses a depletion-mode FET as its gate, enabled by ABB.

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