Allicdata Part #: | STP185N10F3-ND |
Manufacturer Part#: |
STP185N10F3 |
Price: | $ 1.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 100V 120A TO220 |
More Detail: | N-Channel 100V 120A (Tc) 300W (Tc) Through Hole TO... |
DataSheet: | STP185N10F3 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.06400 |
Rds On (Max) @ Id, Vgs: | 4.8 mOhm @ 60A, 10V |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Series: | STripFET™ |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STP185N10F3 is a N-channel MOSFET switch, designed for power switching applications. It is a fully-integrated, high performance switching device, capable of operating at high voltage and current. It is optimized for applications requiring low on-state resistance and excellent thermal performance.
The STP185N10F3 is rated to handle peak currents of 185 A (drain-source on-state) and is rated up to 600 V with a maximum on-state resistance of less than 2.5 Ω. It is suitable for a range of applications including high power switching, motor control and high voltage power distribution.
The STP185N10F3 utilizes a unique, self-aligning gate structure, called the Super Field-Effect Transistor (SuperFET) structure, which allows for ultra-low on-state resistance with low output capacitance. This structure allows for increased efficiency at high frequencies and is well suitable for power management applications. The STP185N10F3 also features an integrated current-limiting resistor, ensuring safe and robust operation.
In operation, the STP185N10F3 uses gate-source voltage (Vgs) to control the on-state resistance. By increasing the Vgs the on-state resistance is reduced and the drain current will increase. When the gate-source voltage is above the threshold voltage, the device is in the linear region and the drain current is determined by the drain-source resistance. As the gate-source voltage increases further, the MOSFET enters its saturation region, and the drain current is determined by the drain source voltage and on-state resistance.
The STP185N10F3 is also well suited for motor control applications, as it has good thermal stability and efficient power switching characteristics. It is suitable for switching up to 600 V and can handle currents up to 185 A. The built-in gate resistors provide a low yield of gate charge, which helps to reduce power loss and EMI issues. The device is designed for operation at temperatures up to 175°C and is capable of working over the full industrial temperature range.
The STP185N10F3 is an excellent choice for a wide range of industrial and power switching applications. Its high peak current capabilities and low on-state resistance make it suitable for power distribution and motor control. Its unique SuperFET structure allows for excellent performance at high frequencies, while the integrated current limiting resistor ensures safe and robust operation.
The specific data is subject to PDF, and the above content is for reference
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