STP36N55M5

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STP36N55M5 Application Field and Working Principle

The STP36N55M5 is a high-speed low-side superJunction MOSFET. It has a maximum R_DS(on) of 0.195 ohm and a very high power dissipation of up to 57W. It is also very efficient, achieving an efficiency of over 80% at a load current of 56A. This makes it ideal for use in applications such as motor control, DC-DC conversion, and other power switching applications.

Features and Advantages

The STP36N55M5 is designed using advanced trench superJunction technology and has a low input capacitance for fast switching. It also has a low gate charge for superior efficiency and a high peak current carrying capacity for superior power delivery. Additionally, the STP36N55M5 is RoHS compliant, making it a good choice for environmentally-friendly applications. Other features include a rated maximum drain source voltage of 600V, a maximum drain-source on-state resistance of 0.195 ohms, and a total gate charge of 3.2nC.

Applications

The STP36N55M5 is suitable for a wide range of applications, such as motor control, DC-DC conversion, and other power switching applications. It is also suitable for use in automotive, industrial, lighting, renewable energy, and consumer electronics applications. It is also popular among those working on personal projects, such as robotics and electronic projects.

Working Principle

MOSFETs work on the principle of field effect. The STP36N55M5 is a N-channel MOSFET, which means that when it is switched on, the gate voltage increases, allowing the N-type channel to become conductive. This allows current to flow between the drain and source terminals. As with all MOSFETs, the STP36N55M5 has an ON-state resistance, R_DS(on), which is the resistance between the drain and source terminals when the MOSFET is in the ON-state. It also has an OFF-state resistance, R_DS(off), which is the resistance between the drain and source terminals when the MOSFET is in the OFF-state. This MOSFET also has a threshold voltage, V_TH, which is the voltage required to turn the device "ON".

The STP36N55M5 uses a conventional current source, which is a voltage source that produces a relatively constant current upon request. This type of current source is ideal for MOSFETs because it helps to reduce the power dissipated in the MOSFET, allowing it to operate at higher power dissipation levels. Additionally, the STP36N55M5 also features a built-in body diode, which helps to protect the circuit in the event of an inductive load switching transient.

Overall, the STP36N55M5 is a highly efficient and robust MOSFET suitable for a wide range of applications. It is fast switching, has a low input capacitance, and a low gate charge, making it ideal for use in power switching applications, motor control, and DC-DC conversion.

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