STP3NK90Z Allicdata Electronics
Allicdata Part #:

497-12789-5-ND

Manufacturer Part#:

STP3NK90Z

Price: $ 1.37
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 900V 3A TO-220
More Detail: N-Channel 900V 3A (Tc) 90W (Tc) Through Hole TO-22...
DataSheet: STP3NK90Z datasheetSTP3NK90Z Datasheet/PDF
Quantity: 1000
1 +: $ 1.24740
50 +: $ 1.00813
100 +: $ 0.90733
500 +: $ 0.70570
1000 +: $ 0.58472
Stock 1000Can Ship Immediately
$ 1.37
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 90W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STP3NK90Z is a high voltage, high speed N-Channel power transistor from STMicroelectronics. It is a high-speed, high current switching transistor suitable for various applications such as motor control, DC-DC converters, AC-DC converters, and general power amplifiers. The STP3NK90Z is a 500V N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor) with high current (6amp) and low gate charge (6.7nC).

The STP3NK90Z is often used in applications that require current switching and high voltage protection. As a high voltage power transistor, it can be used in switching mode power supplies (SMPSs), charge pumps, DC-DC converters, and can also be used as a powerful driver for digital logic circuits. It is also used for controlling power electronic devices such as DC and AC motors and solenoids.

The STP3NK90Z is also used in various high current and voltage applications such as motor drivers, power supply circuits, and in amplifier circuits. It features a dual N-Channel structure which enables it to have a low Rds(on) (drain to source on-state resistance) and a high current gain, making it an ideal power transistor for high speed switching applications.

The working principle of the STP3NK90Z is based on a typical FET design. It consists of an active region between the drain and source, known as the “channel”, which is made of doped Silicon. When an electric field is applied between the gate and source, the electric field polarizes the Silicon atoms, creating a circular electric field. This electric field, in turn, repels the free electrons in the channel and traps them in the depleted zone at the bottom of the channel. This effectively reduces current flow through the channel, allowing for the STP3NK90Z to be used as a kind of electronic switch.

Due to the high current gains and low Rds(on) of the STP3NK90Z, it can be used in many analog and high switching speed applications. The low Rds(on) ensures a low power loss while switching. The high current gain allows it to be used in power amplifiers (particularly class AB and B) and as a driver for digital logic circuits. It can also be used as a high current switch in many power management systems, such as those controlling DC and AC motors.

The STP3NK90Z is a versatile transistor that is suitable for a wide range of power management applications. It is capable of handling high current and voltage loads, making it an ideal choice for many power switching applications. Its low Rds(on) and high current gain allows it to serve as a high current switch with minimal power losses, making it ideal for high speed switching applications. Thanks to its versatile design, the STP3NK90Z can be used in many different types of electronic circuits, from simple digital logic to high power analog amplifiers and more.

The specific data is subject to PDF, and the above content is for reference

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