STP31N65M5

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The STP31N65M5 is a Field-Effect Transistor (FET) designed for high-voltage switching and linear applications. The N-channel depletion-mode MOSFET offers high performance in power management, synchronous rectification, and motor control applications.

The STP31N65M5 features a wide range of features to improve performance and reliability in its applications. These include an integrated bootstrap diode, built-in Schottky diode, and active Miller clamp. It also features a low on-resistance RDS(ON) of 6.5mΩat 10V for fast switching speed and low power loss.

Features

• 60V VDSS
• 8A continuous drain current
• 2.2mΩ RDS(ON) at 10V
• Integrated Schottky diode
• Integrated bootstrap diode
• Active Miller clamp

Application Field and Working Principle

The STP31N65M5 is designed to handle a wide array of applications in power management, synchronous rectification, and motor control. In the majority of cases, it can be used as a higher-power alternative to MOSFETs in the same package size. Examples include:

• Synchronous rectifier for power factor correction
• Switching and booster circuits for AC/DC, DC/DC, and DC/AC converters
• DC motor control

The STP31N65M5 is an N-channel FET, meaning that it\'s an amplifier with a voltage-controlled gate. When the gate voltage, VGS, is applied, the C-S channel turns on and current is allowed to flow between the source and drain terminals. The greater the gate voltage, the more current is allowed to flow between the source and drain, resulting in higher power efficiency and better performance.

The Schottky diode, integrated into the STP31N65M5, helps reduce power loss generated by transients during switching operations, as well as when the VGS is turned off and on. This helps to extend the life of the FET and improve system reliability. The integrated bootstrap diode helps reduce the operating voltage of the system by providing a high-level voltage for VGS, without the need for a secondary power source.

The Active Miller clamp allows for a higher VGS voltage at the drain and source on the device, even in high capacitive loads. This helps reduce the switching time of the FET, while also providing a controllable output waveform.

Conclusion

The STP31N65M5 offers a range of features designed to improve performance and reliability in a wide range of power management, synchronous rectification, and motor control applications. Its low on-resistance RDS(ON) of 6.5mΩat 10V allows for fast switching speed and low power loss, while the integrated bootstrap diode and Schottky diode help reduce the operating voltage of the system and extend the life of the FET.

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