STP30NM60ND Allicdata Electronics
Allicdata Part #:

497-8448-5-ND

Manufacturer Part#:

STP30NM60ND

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 25A TO-220
More Detail: N-Channel 600V 25A (Tc) 190W (Tc) Through Hole TO-...
DataSheet: STP30NM60ND datasheetSTP30NM60ND Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Series: FDmesh™ II
Rds On (Max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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STP30NM60ND is a series of low-voltage, high-voltage N-channel MOSFET transistors manufactured by STMicroelectronics. It belongs to the ST High Voltage Power MOSFET family. It has a range of applications, including high-speed switching, motor control, as well as consumer and industrial power applications. Additionally, this series of power MOSFETs is also suitable for use in various communication, IT and home appliance systems.

The STP30NM60ND features a number of beneficial characteristics, including low on-state resistance, low gate threshold, fast switching speed, and improved energy efficiency. Combining these features, this series of power MOSFETs provides reliable performance for a variety of applications. Additionally, it has enhanced protection features such as over-temperature protection, over-current protection and under-voltage lock-out.

The STP30NM60ND is a 30 V N-channel MOSFET that can handle up to 600V. It has a low gate threshold voltage of 3 V, an RDS(on) at 4.5 mΩ, and a maximum current rating of 8 A. It also features an excellent transient thermal impedance at 1.8 ºC/W and an improved commutation avalanche capability. This low-voltage, high-voltage N-channel power MOSFET is ideal for use in applications such as switch mode power supplies (SMPS), motor speed control, and other high-power, high-current switching applications.

The working principle of STP30NM60ND is based on the principles of MOSFET switching function. It is a three-terminal semiconductor device that uses electric current to control a larger electric current. The performance of its operation is based on the four basic parameters such as gate threshold voltage, gate-to-source voltage, drain-to-source voltage and drain current. The drain voltage will increase if the gate-to-source voltage is increased. Furthermore, the drain current increases with increasing gate threshold voltage.

When the MOSFET is on, the source-to-drain resistance is low and the current flow increases. The MOSFET also features an insulated gate that does not require a bias current. In addition, it is also capable of operating in reverse conduction mode where the drain-to-source voltage must be higher than the source-to-ground voltage.

The STP30NM60ND is an excellent choice for a wide range of applications such as in medical, telecommunication, computer, automotive and industrial power applications. Its features such as high speed switching, improved energy efficiency and enhanced protection, also make it a great option for high power and high current switching applications. This series of MOSFETs offer reliable, durable and efficient performance and is an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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