
Allicdata Part #: | 497-4379-5-ND |
Manufacturer Part#: |
STP3NK80Z |
Price: | $ 1.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 2.5A TO-220 |
More Detail: | N-Channel 800V 2.5A (Tc) 70W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1258 |
1 +: | $ 1.11000 |
10 +: | $ 1.07670 |
100 +: | $ 1.05450 |
1000 +: | $ 1.03230 |
10000 +: | $ 0.99900 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 485pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 4.5 Ohm @ 1.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FETs, MOSFETs, and transistors are all related, but different. The STP3NK80Z is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and is a specifically single type which have a great many uses, applications, and is relatively powerful in both output and its capabilities.
They are commonly seen used in power electronics such as power supplies and audio amplifiers, due to their efficiency and cost-effectiveness. The STP3NK80Z is a part of the series of STP3NK80 transistors, with the \'Z\' being like a suffix which indicates that this specific component has Zener based Gate-Source protection.
FETs and MOSFETs utilize both an Electron field (in an n-channel configuration) or a Hole field (in a p-channel configuration), which is ths source of the power output. In an MOSFET the field is controlled by a gate which acts like a switch that allows the electrons or holes to flow through the device.
All this relates to the STP3NK80Z. This component uses an N-channel type of FET, which means electrons flow in rectangular shape called a channel. This runs from the source of the component to the drain.
The source is the negative point and the drain is the positive point. When a voltage is applied to the positive point (drain) and the negative point (source) it causes the electrons to flow.
This is known as the Pinch-Off effect, and is determined by the relationship between the Drain to Source and the Gate to Source. The gate is then used to adjust the voltage and current, which, in turn, is used to increase or decrease the power to the component.
This is the main premise of the STP3NK80Z, it\'s a component which can be used to adjust the voltage and current of a power device in a highly efficient, cost-effective and reliable way.
The STP3NK80Z provides high power handling capabilities and is capable of withstanding high currents and voltages. Its monolithically integrated protection circuitry and wide voltage range can handle up to 30V, with a continuous drain current of up to 19A and a peak drain current of up to 33A.
The STP3NK80Z features a low on-resistance too, making it excellent for high current and high power applications, and the N-channel type of MOSFET reduces the power loss and increases the overall efficiency of the component.
In conclusion, the STP3NK80Z is a single type of Metal Oxide Semiconductor Field Effect Transistor that is usually found in power electronics, ones that require both high power handling capabilities and the ability to adjust the voltage and current. Its Pinch-Off and N-channel type of FETs allow for increased efficiency, reduced power loss, and the monolithic protection circuitry allow it to handle higher voltages and currents.
The specific data is subject to PDF, and the above content is for reference
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