STP33N60DM2 Allicdata Electronics
Allicdata Part #:

497-16352-5-ND

Manufacturer Part#:

STP33N60DM2

Price: $ 2.96
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 24A
More Detail: N-Channel 600V 24A (Tc) 190W (Tc) Through Hole TO-...
DataSheet: STP33N60DM2 datasheetSTP33N60DM2 Datasheet/PDF
Quantity: 1000
1 +: $ 2.96000
10 +: $ 2.87120
100 +: $ 2.81200
1000 +: $ 2.75280
10000 +: $ 2.66400
Stock 1000Can Ship Immediately
$ 2.96
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Series: MDmesh™ DM2
Rds On (Max) @ Id, Vgs: 130 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STP33N60DM2 is a Power MOSFET integrated circuit (IC) produced by STMicroelectronics. This advanced vertical power MOSFET is optimized for high-speed switching applications. The device provides excellent static and dynamic characteristics, delivering superior performance over traditional power MOSFETs.

The STP33N60DM2 is a single-channel Power MOSFET with an N-channel MOSFET integrated on the die. It is designed to withstand an avalanche of up to 900A/µs, making it ideal for applications requiring high surge currents. It features a wide range of operating temperature, low drain-source resistance RDS(on) to reduce conduction losses, and low gate charge for higher efficiency. With its low input capacitance and low gate resistance, it is the perfect choice for high-efficiency and high-speed applications.

The STP33N60DM2 is suitable for various applications such as power converters, AC/DC power stages, DC/DC converters, synchronous rectifiers, and motor control. It is also commonly used in power switching, load switching, and load regulation in automotive systems. The device is rated for a maximum operating voltage of 40V, a maximum drain-source voltage of 600V, and a maximum drain current of 33A. It is also designed with a low gate threshold voltage, making it ideal for low-voltage operation.

The STP33N60DM2 offers excellent protection capabilities with reliable overcurrent and short-circuit protection. It features an integrated temperature-sensitive OVP that limits current during over temperature and over current conditions. It is also designed to reduce switching losses during operation and provide enhanced safety.

At the core of the STP33N60DM2 is a process-integrated power MOSFET built on an advanced high-voltage, high-temperature, N-channel MOSFET process. It enables unmatched dynamic performance, reducing switching losses for improved energy efficiency. The device is designed for maximum performance in medium- and low-voltage applications. Its low gate voltage, low gate capacitance, and low drain-source resistance makes it suitable for high-speed applications. It also features an integrated temperature-sensitive OVP, enabling reliable overcurrent and short-circuit protection.

The STP33N60DM2 is an ideal solution for applications requiring high current and high speed, including AC/DC power stages, DC/DC converters, synchronous rectifiers, and motor control. With its advanced process and protection features, the device is designed to provide superior performance in high-efficiency, low-voltage applications.

The specific data is subject to PDF, and the above content is for reference

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