Allicdata Part #: | 497-13972-5-ND |
Manufacturer Part#: |
STP360N4F6 |
Price: | $ 4.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 40V TO-220 |
More Detail: | N-Channel 40V 120A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | STP360N4F6 Datasheet/PDF |
Quantity: | 25 |
1 +: | $ 3.95640 |
10 +: | $ 3.53178 |
Specifications
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 17930pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 340nC @ 10V |
Series: | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI |
Rds On (Max) @ Id, Vgs: | 1.8 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Description
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Introduction
The STP360N4F6 is a N-channel Enhancement Mode Field Effect Transistor (FET). This means it is an electronic device composed of insulation-filled channels located between two semiconductor regions in the form of two source/drain regions and a single body region. It is part of a large family of FETs known as "MOSFETs" (Metal Oxide Semiconductor Field Effect Transistors).Application Field
STP360N4F6 transistors are highly versatile and can be used for a variety of applications. Thanks to their low voltage rating and low on-resistance, it can be used in place of more traditional bipolar transistors in a variety of power amplifier designs and power management applications. They can also be used in linear and switched power supplies, battery chargers, and DC/DC converters.The device is especially suitable for automotive applications due to its high performance and its excellent temperature resistance. Its high thermal resistance enables it to effectively control currents at high temperatures and its high gate-source capacitance enables it to support operating frequencies up to 2MHz.Working Principle
The STP360N4F6 transistor works in an "enhancement mode." This means that, in order for current to flow across the device, the voltage applied to its gate should exceed the voltage on its source. When the voltage at the gate exceeds the voltage at the source, the FET is said to be in the "on" state, and a channel will be created between its source and drain, allowing current to flow. When the voltage at the gate is less than the voltage at the source, the FET is said to be in the "off" state, and the channel between the source and drain will be blocked, preventing current from flowing.The gate voltage of the STP360N4F6 device is usually controlled by an external source, such as a signal from a microcontroller or other electronic device. By controlling the gate voltage of the FET, the electronic device can control the amount of current allowed to flow between the source and drain of the device, thereby controlling the operation of the circuit.Conclusion
The STP360N4F6 is a versatile, N-channel Enhancement Mode FET that can be used for a variety of applications. Its low voltage rating, low on-resistance, and excellent temperature resistance make it particularly suitable for use in automotive applications. In addition, its high gate-source capacitance enables it to support frequencies up to 2MHz, making it suitable for high frequency applications. The device is operated by controlling the voltage applied to its gate; by controlling the gate voltage, the amount of current allowed to flow between the source and drain can be controlled, allowing the circuit to be operated in a predictable manner.The specific data is subject to PDF, and the above content is for reference
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