Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	210W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2400pF @ 100V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	54nC @ 10V
Series:	MDmesh™ DM2
Rds On (Max) @ Id, Vgs:	110 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	28A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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STP35N60DM2 Application Field and Working Principle

Introduction

The STP35N60DM2 is a 600V CoolMOS power MOSFET that’s serving as a driver and a cascode in the power electronic industry. With a high-voltage fast rise time, the incorporated Safe Operating Area (SOA) feature and a low FOM, this MOSFET is suitable for many robust applications such as solar and wind power as well as motor control applications.

Application Field

The STP35N60DM2 is a specifically designed N-channel power MOSFET for high-voltage applications. This MOSFET is a great choice for inverter-based motor drives and solar, wind and power generators due to its Fast Rise Time capability and high voltage blocking capabilities. With its high-speed switching capability, this device is able to reduce power dissipation and improve overall device efficiency. This makes the STP35N60DM2 a great device for photovoltaic systems, such as solar, wind and hybrid power plants.The STP35N60DM2 is also used in applications such as AC/DC converters, drives and control systems, switch mode power supplies, and other power-related applications. This device is able to efficiently convert electrical energy into mechanical or heat energy, making it very useful in power-transformation and other related applications.

Features

The most beneficial feature of the STP35N60DM2 is its high-voltage Fast Rise Time. This capability lowers switching losses and also reduces power dissipation, resulting in improved efficiency. The STP35N60DM2 also features a Wide Safe Operating Area (SOA), which allows the user to operate the device at higher drain-source voltages and currents. This allows for a more robust operation, which is important in the power electronics industry. Other features of the STP35N60DM2 include integrated EMI technologies, low gate charge Qg and superior thermal characteristics that suit lower temperature requirements.

Working Principle

The STP35N60DM2 is a N-channel power MOSFET that works on the principle of the MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). This type of transistor is composed of an insulated gate, which is surrounded by a conductive body. The insulated gate is used to regulate the flow of electrons passing between it and the conductive body. The gate controls the flow of current through the device, thereby controlling the electrical current from a device’s power source to its load. When a voltage is applied across the gate and the source, the electrons within the source are attracted towards the gate. This causes the number of electrons passing through the device to decrease, thus regulating the current flow. In doing so, the MOSFET is able to regulate the current flowing through the device.

Conclusion

The STP35N60DM2 is a N-channel power MOSFET that’s designed specifically for the power electronics industry. It’s suitable for both high-voltage and high-speed switching applications, making it a great choice for motor drives, renewable energy systems and power transformers. It features a high-voltage Fast Rise Time, Wide Safe Operating Area (SOA) and integrated EMI technologies. It also has a low gate charge and superior thermal characteristics, which make it suitable for lower temperature conditions. All in all, the STP35N60DM2 is a great device for various power related applications.

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